Dual-Schottky-junctions coupling device based on ultra-long β-Ga2O3 single-crystal nanobelt and its photoelectric properties

Haifeng Chen; Xiaocong Han; Chenlu Wu; Zhanhang Liu; Shaoqing Wang; Xiangtai Liu; Qin Lu; Yifan Jia; Zhan Wang; Yunhe Guan; Lijun Li; Yue Hao

doi:10.1088/1674-4926/45/5/052502

Journal of Semiconductors, Volume. 45, Issue 5, 052502(2024)

Dual-Schottky-junctions coupling device based on ultra-long β-Ga₂O₃single-crystal nanobelt and its photoelectric properties

Haifeng Chen^*, Xiaocong Han, Chenlu Wu, Zhanhang Liu, Shaoqing Wang, Xiangtai Liu, Qin Lu, Yifan Jia, Zhan Wang, Yunhe Guan, Lijun Li, and Yue Hao

Author Affiliations

Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, China

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References(36)

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Haifeng Chen, Xiaocong Han, Chenlu Wu, Zhanhang Liu, Shaoqing Wang, Xiangtai Liu, Qin Lu, Yifan Jia, Zhan Wang, Yunhe Guan, Lijun Li, Yue Hao. Dual-Schottky-junctions coupling device based on ultra-long β-Ga₂O₃single-crystal nanobelt and its photoelectric properties[J]. Journal of Semiconductors, 2024, 45(5): 052502

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Paper Information

Category: Articles

Received: Dec. 6, 2023

Accepted: --

Published Online: Jul. 8, 2024

The Author Email: Chen Haifeng (HFChen)

DOI:10.1088/1674-4926/45/5/052502

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology