The sur face passivation treatment of mercury cadmium telluride in frared detectors has a signi ficant impact on the device's dark current , uhich determines the device's detection per formance. In order to investigate the inhibitory effect of di f ferent grouth methods of sur face passivation layers on dark current , a molecular beam epitaxy system was used to grow mercury cadmium telluride material on a Si substrate.CTe/ ZnS passivation film layers were groun by magnetron sputtering and in-situ passivation methods , respectively. A variable area photovoltaic detector was prepared on HgCdTe material using semiconductor technology. By testing the dark current of devices with di f ferent passivation film layers, the relationship between zero bias resistance and area product (R, A) and the ratio of perimeter area (p/A) was analyzed.The result shous that Si-based mercury cadmium telluride devices with magnetron sputtering growth passivation layers exhibit signi ficant tunneling currents, while Si-based mercury cadmium telluride devices with in-situ passivation grouth passivation layers can more ef fectively suppress sur face leakage currents. By fitting the variation of the R. A factor of the device with the PN junction area , it can be seen that devices with in situ growth of passivation layers have better passivation ef fects. The preparation and testing of variable area devices can effectively and intuitively reflect device per formance.

To improve the charge processing capability of longwave infrared detectors, an integrated capacitor multiplexing technology is proposed. This technology divides the readout circuit array into two parts: odd and even rows The odd and even row pixels are integrated and read out separately. When all odd row pixels are integrated, all even row pixels are not integrated. The odd row pixels reuse the integration capacitance of even row pixels, and after the integration of odd row pixels is completed, they are read out in order of row and column. Similarly, when all even row pixels are integrated, odd row pixels are not integrated, and even row pixels reuse the capacitance of odd row pixels. After integration is completed, even row pixels are read out in order. Compared to the method of using stacked capacitors to improve charge processing capacity, the integrated capacitor multiplexing technology is more effective and not limited by the process. The simulation results show that the integrated capacitance multiplexing technology can increase the equivalent integrated capacitance of pixels to twice the original value, and increase the charge processing ability of the readout circuit from 20 Me

In large-scale infrared readout integrated circuits (ROIC), the data transfer efficiency and the number of interface circuits are particularly crucial Traditional interface circuits use parallel interfaces for data transmission, which takes up a significant amount of chip pins. In order to improve the efficiency of data transmission, a 3-channel serial low voltage differential signaling (LVDS) interface circuit is designed for data reception. The circuit adopts a 0. 18 um complementary metal oxide semiconductor (CMOS) process. The simulation results show that the LVDS interface circuit can convert 2-channel receiver data into 8-channel data at a frequency of 400 MHz and output it to the internal digital processing unit. Compared with traditional parallel interfaces, this circuit saves 6 data transmission pins, greatly improving data transmission efficiency.

High-purity Indium is one of the original materials of InSb. The type and content of the trace elements directly influence the performance of the detector. Therefore it is particularly important to establish the accurate and efficient quantified method. By strictly controlling the temperature to ensure the realization of the acid hydrolysis process, a standard addition method was used to establish a standard curve and test the sample After comparing the response rates, the selected base sample for this test was In single standard solution with a concentration of 10 ppb, and the linear correlation coefficients of the standard curve were close to 0.999. Excluding the influence of liner differences, the test results of multiple batches were analyzed to verify their accuracy. At the same time, the internal standard method was used to verify the content of various impurity elements in the In10000 solution. The results show that the base sample has extremely low impurity content. The accuracy and repeatability of this testing method were verified multiple times by configuring a solution with known standard concentrations. The test results show that this testing method is accurate and effective, and can be applied to the impurity content testing of high-purity (greater than 6N)In.

As a kind of soft protective means, smoke screen has the characteristics of high cost-benefit ratio and convenient development in modern opto-electronic guided weapons. Therefore, accurate and reliable evaluation of the smoke screen shielding effect has become one of the important research issues in the field of smoke screens. In view of the current situation of multiple and complex evaluation indexes, based on the description of the mechanism of smoke screen interference, the existing evaluation indexes and methods of smoke screen interference effect are systematically analyzed and summarized from three aspects: interference band, image quality change before and after smoke screen release, as well as smoke screen operational performance. Their advantages and disadvantages, application occasions and limitations are pointed out, which provide ideas and inspiration for relevant researchers In order to better adapt to the evaluation of smoke screen interference effect under the complex environment conditions in actual combat, it is pointed out that the smoke screen shielding effect should be evaluated from the perspective of image quality change and smoke screen performance in this paper, so as to provide auxiliary strategies for the operational use and effectiveness evaluation of smoke equipment.

The malfunction of power equipment may lead to instability or even disconnection of the power system, causing huge losses to power safety and the national economy. It is crucial to quickly and accurately identify these malfunctions. Infrared image features exhibit excellent feature expression ability in capturing the heating malfunctions of power equipment. However, during the image acquisition process, problems such as object overlap, occlusion and interference between categories may occur. Therefore, a complex image fault recognition algorithm based on multilayer deep neural networks is proposed in this paper, fully utilizing the high-level feature extraction capability of multilayer network modules and the feature fusion capability of multilevel network modules to improve the accuracy of fault recognition. Experimental results show that the proposed algorithm is superior to existing models such as Faster-RCNN, VGG16, VGG19 and traditional Resnet models in terms of accuracy and running time, and its effectiveness in solving problems such as target overlap,occlusion and dass interference in images is verified.