[1] [1] Y Lam, J P Loher, J Singh. Comparison of steady state and transient characteristics of lattice matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-A lInAs (on InP) quantum well lasers[J]. IEEE J Quantum Electron, 1992, 28(5): 1248-1260.

[2] [2] I Suemune, L A Coldren, M Yamanishi, et al.. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser[J]. Appl Phys Lett, 1988, 53(15): 1378-1380.

[3] [3] D Schlenker, T Miyamoto, Z Chen, et al.. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers[J]. J Cryst Growth, 2000, 209(1): 27-36.

[4] [4] W Gao, A Mastrovito, K Luo, et al.. High power 1060 nm InGaAs/GaAs single-mode laser diodes[C]. SPIE, 2005, 5711: 58-65.

[5] [5] Pan Jiaoqing, Huang Baibiao, Zhang Xiaoyang, et al.. MOCVD growth of InGaAs/GaAs quantum well for 1064 nm LDs[J]. J Optoelectronics·Laser, 2003, 14(6): 590-593.

[6] [6] J I Chyi, J L Shieh. Material properties of compositional graded InxGa1xAs and InxAl1xAs epilayers grown on GaAs substrates[J]. J Appl Phys, 1996, 79(11): 8367-8370.

[7] [7] P Werner, N D Zakharov, Y Chen, et al.. Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate[J]. Appl Phys Lett, 1993, 62(22): 2798-2800.

[8] [8] C Wang, Y Su, R W Chuang, et al.. Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate[J]. J Cryst Growth, 2008, 310(23): 4854-4857.

[9] [9] Yuan Huibo, Li Lin, Qiao Zhongliang, et al.. Optical characteristics of GaAsP/GaInP quantum well grown by metal-organic chemical vapor deposition[J]. Chinese J Lasers, 2014, 41(5): 0506002.

[10] [10] D H Rich, K Rammohan, Y Tang, et al.. Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1-xAs/GaAs[J]. Journal of Vacuum Science and Technology of Material, 1995,13(4): 1766-1772.

[11] [11] A Jasik, A Wnuk, J Gaca, et al.. The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods[J]. J Cryst Growth, 2009, 311(19): 4423-4432.

[12] [12] S M Wang, T G Andersson, M J Ekenstedt. Temperature-dependent transition from two-dimentional to three-dimensional growth in highly strained InxGa1-xAs/GaAs (0.365≤x≤1) single quantum wells[J]. Appl Phys Lett, 1992, 61(26): 3139-3141.

[13] [13] D Schlenker, T Miymoto, Z Chen, et al.. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers[J]. J Cryst Growth, 2000, 209(1): 27-36.

[14] [14] Jia Guozhi, Yao Jianghong, Shu Yongchun, et al.. Influence of growth temperature and structure parameters on optical characteristic InGaAs/GaAs quantum wells[J]. Chinese Journal of Luminescence, 2008, 29(12): 325-328.

[15] [15] F Bugge, U Zeimer, M Sato, et al.. MOVPE growth of highly strained InGaAs/GaAs quantum wells[J]. J Cryst Growth, 1998, 183(4): 511-5188.