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Chinese Journal of Lasers, Volume. 31, Issue 2, 129(2004)

Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask

[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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    [5] [5] Y. J. Yang, T. G. Dziura, R. Femandez et al.. Low-threshold operation of a GaAs single quantum well mushroom structure surface-emitting laser [J]. Appl. Phys. Lett., 1991, 58(16):1780～1782

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask[J]. Chinese Journal of Lasers, 2004, 31(2): 129

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    Paper Information

    Category: laser devices and laser physics

    Received: Nov. 12, 2002

    Accepted: --

    Published Online: Jun. 12, 2006

    The Author Email: (hs_wang@email.jlu.edu.cn)

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology