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Chinese Journal of Lasers, Volume. 31, Issue 2, 129(2004)

Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask

[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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    Room temperature CW vertical cavity surface emitting lasers were fabricated by tilt ion implanting and optimizing ion distribution around the active region. The device, whose threshold current was as low as 1.4 mA, gives the maximum more than 1 mW light power.

    Keywords
    ion implantedtungsten wires as maskvertical cavity surface emitting laserslaser technique
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask[J]. Chinese Journal of Lasers, 2004, 31(2): 129

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    Paper Information

    Category: laser devices and laser physics

    Received: Nov. 12, 2002

    Accepted: --

    Published Online: Jun. 12, 2006

    The Author Email: (hs_wang@email.jlu.edu.cn)

    DOI:

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    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology