Chinese Journal of Lasers, Volume. 35, Issue 8, 1144(2008)

Direct Current and 1/f Noise Characteristics of InGaAsP/GaAs High Power Quantum Well Laser Diodes

Zhang Shuang1、*, Guo Shuxu1, Gao Fengli1, Guo Xin2, Cao Junsheng1, and Yu Siyao1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    References(14)

    [1] [1] Gao Songxin, Wu Deyong, Wei Bin et al.. Reliability of high power diode laser stack [J]. Chinese J. Lasers, 2006, 33(Suppl.):6~9

    [2] [2] P. D. Wright, W. B. Joyce, D. C. Craft. Electrical derivative characteristics of InGaAsP buried heterostructure lasers [J]. J. Appl. Phys., 1982, 53(3):1364~1372

    [3] [3] M. M. Choy, C. E. Barnes. Effective screen for fast aging InGaAsP BH lasers using electrical derivatives [J]. Electron. Lett., 1985, 21(19):846~848

    [4] [4] Zhang Shuang, Guo Shuxu, Guo Xin et al.. Extrinsic ideality factor of laser array [J]. Chinese Journal of Semiconductors, 2007, 28(5):768~773

    [5] [5] Qi Liyun, Shi Jiawei, Li Hongyan et al.. The peak in the electric derivative curves and optic derivative curves of GaAs/GaAlAs high-power QW lasers [J]. Microelectron. Reliab., 2000, 40:2123~2128

    [8] [8] Bao Junlin, Zhuang Yiqi, Du Lei et al.. A unified model for 1/f noise in n-channel and p-channel MOSFETs [J]. Acta Physica Sinica, 2005, 54(5):2118~2122

    [9] [9] Hu Jin, Du Lei, Zhuang Yiqi et al.. Noise as a representation for reliability of light emitting diode [J]. Acta Physica Sinica, 2006, 55(3):1384~1389

    [10] [10] X. Y. Chen, A. Pedersen, O. G. Helles et al.. Electrical noise of laser diodes measured over a wide range of bias currents [J]. Microelectron. Reliab., 2000, 40:1925~1928

    [11] [11] R. Crook, B. K. Jones. Noise and DC characteristics of power silicon diodes [J]. Microelectron. Reliab., 1997, 37(10/11):1635~1638

    [12] [12] Hu Guijun, Shi Jiawei, Zhang Shumei et al.. The correlation between the low-frequency electrical noise of high-power quantum well lasers and devices surface non-radiative current [J]. Microelectron. Reliab., 2002, 42:153~156

    CLP Journals

    [1]  Eerdunchaolu, Wuyunqimuge, Han Chao. Temperature Dependence of Effective Mass of Weak-Coupling Polaron in a Quantum Rod[J]. Acta Optica Sinica, 2011, 31(8): 827001

    [2]  Eerdunchaolu, Wuyunqimuge, Wang Hongyan. Effective Potential of StrongCoupling Bipolaron in a Parabolic Quantum Dot[J]. Acta Optica Sinica, 2010, 30(9): 2737

    [3] Ning Xia, Xuan Fang, Tianyu Rong, Dengkui Wang, Dan Fang, Jilong Tang, Xinwei Wang, Xiaohua Wang, Yongfeng Li, Bin Yao, Zhipeng Wei. Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials[J]. Chinese Journal of Lasers, 2018, 45(6): 0603002

    Tools

    Get Citation

    Copy Citation Text

    Zhang Shuang, Guo Shuxu, Gao Fengli, Guo Xin, Cao Junsheng, Yu Siyao. Direct Current and 1/f Noise Characteristics of InGaAsP/GaAs High Power Quantum Well Laser Diodes[J]. Chinese Journal of Lasers, 2008, 35(8): 1144

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Sep. 29, 2007

    Accepted: --

    Published Online: Aug. 16, 2008

    The Author Email: Shuang Zhang (zhangshuang@jlu.edu.cn)

    DOI:

    Topics