[1] Q. Ji, X. Ma, J. Sun et al. Novel method for measurement of effective cavity length of DBR fiber. Chin. Opt. Lett., 8, 398(2010).

[2] J. A. Tatum, D. Gazula, L. A. Graham et al. VCSEL-based interconnects for current and future data centers. J. Lightwave Technol., 33, 727(2015).

[3] G. Kanakis, N. Iliadis, W. Soenen et al. High-speed VCSEL-based transceiver for 200 GbE short-reach intra-datacenter optical interconnects. Appl. Sci., 9, 2488(2019).

[4] D. Bimberg. Ultrafast VCSELs for datacom. Photonics J., 2, 273(2010).

[5] A. Liu, P. Wolf, J. A. Lott et al. Vertical cavity surface emitting lasers for data communication and sensing. Photon. Res., 7, 121(2019).

[6] L. M. Giovane, J. Wang, M. V. R. Murty et al. Development of next generation data communication VCSELs. Optical Fiber Communications Conference and Exhibition, 1(2020).

[7] M. V. R. Murty, J. Wang, A. L. Harren et al. Development and characterization of 100 Gb/s data communication VCSELs. IEEE Photon. Technol. Lett., 33, 812(2019).

[8] M. Srinivasan, J. Song, A. Grabowski et al. End-to-end learning for VCSEL-based optical interconnects: state-of-the-art, challenges, and opportunities. J. Lightwave Technol., 41, 3261(2023).

[9] K. Iga. VCSEL: born small and grown big. Proc. SPIE, 11263, 1126302(2020).

[10] N. Ledentsov, O. Makarov, V. Shchukin et al. High-speed VCSEL technology and applications. J. Lightwave Technol., 40, 1749(2022).

[11] R. Pitwon, L. O’Faolain. Trends in enhanced integrated photonics for hyperscale data center and 5G environments. IEEE CPMT Symposium Japan(2019).

[12] C. Xie, B. Zhang. Scaling optical interconnects for hyperscale data center networks. Proc. IEEE, 110, 1699(2022).

[13] S. Popov, X. Pang, O. Ozolins et al. Short reach communication technologies for client-side optics beyond 400 Gbps. IEEE Photon. Technol. Lett., 33, 18(2021).

[14] Y. T. Han, D. H. Lee, D. J. Kim et al. Technology trends of optical devices and components for datacenter communications. Electron. Telecommun. Trends, 37, 42(2022).

[15] J. A. Tatum, G. D. Landry, D. Gazula et al. VCSEL-based optical transceivers for future data center applications. Optical Fiber Communication Conference M3F-6(2018).

[16] J. Cheng, C. Xie, Y. Chen et al. Comparison of coherent and IMDD transceivers for intra datacenter optical interconnects. Optical Fiber Communications Conference and Exhibition(2019).

[17] C. Xie, C. Wang, Q. Chen et al. Characteristics of field operation data for optical transceivers in hyperscale data centers. Optical Fiber Communication Conference, Th2A-1(2022).

[18] L. Luo, H. Yu, K. T. Foerster et al. Inter-datacenter bulk transfers: trends and challenge. IEEE Network, 34, 240(2020).

[19] M. S. B. Hossain, T. Rahman, N. Stojanović et al. Transmission beyond 200 Gbit/s with IM/DD system for campus and intra-datacenter network applications. IEEE Photon. Technol. Lett., 33, 263(2021).

[20] J. Zhang, J. Yu, L. Zhao et al. Demonstration of 260-Gbps single-lane EML-based PS-PAM-8 IM/DD for datacenter interconnects. Optical Fiber Communication Conference, W4I-4(2019).

[21] E. El-Fiky, M. Osman, A. Samani et al. First demonstration of a 400 Gbps 4λ CWDM TOSA for datacenter optical interconnects. Opt. Express, 26, 19742(2018).

[22] K. Naoe, T. Nakajima, Y. Nakai et al. Advanced InP laser technologies for 400G and beyond hyperscale interconnections. Proc. SPIE, 11356, 1135604(2020).

[23] X. Zhou, C. F. Lam, R. Urata et al. State-of-the-Art 800G/1.6 T datacom interconnects and outlook for 3.2 T. Optical Fiber Communication Conference, W3D-1(2023).

[24] T. Wettlin, S. Calabrò, T. Rahman et al. DSP for high-speed short-reach IM/DD systems using PAM. J. Lightwave Technol., 38, 6771(2020).

[25] Q. Hu, M. Chagnon, K. Schuh et al. IM/DD beyond bandwidth limitation for data center optical interconnects. J. Lightwave Technol., 37, 4940(2019).

[26] E. Berikaa, M. S. Alam, S. Bernal et al. Net 1.6 Tbps O-band coherent transmission over 10 km Using a TFLN IQM and DFB lasers for carrier and LO. Optical Fiber Communication Conference, Th4B-1(2023).

[27] X. Zhou, R. Urata, H. Liu. Beyond 1 Tb/s intra-data center interconnect technology: IM-DD OR coherent?. J. Lightwave Technol., 38, 475(2019).

[28] E. Haglund, P. Westbergh, J. S. Gustavsson et al. 30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25–50 Gbit/s. Electronics Lett., 51, 1096(2015).

[29] P. Moser, J. A. Lott, P. Wolf et al. 85-fJ dissipated energy per bit at 30 Gbps across 500-m multimode fiber using 850-nm VCSELs. IEEE Photon. Technol. Lett., 25, 1638(2013).

[30] J. Wang, M. V. R. Murty, Z. W. Feng et al. 100Gbps PAM4 oxide VCSEL development progress at Broadcom. Proc. SPIE, 11300, 84(2020).

[31] M. Hoser, W. Kaiser, D. Quandt et al. Highly reliable 106 Gbps PAM-4 850 nm multi-mode VCSEL for 800G ethernet applications. Optical Fiber Communications Conference, Tu2D.5(2022).

[32] B. Weigl, M. Grabherr, C. Jung et al. High data rate few-mode transmission over graded-index single-mode fiber using 850 nm single-mode VCSEL. Opt. Express, 27, 21395(2019).

[33] D. Wu, X. Yu, H. Wu et al. Single-mode 850nm VCSELs demonstrate 96 Gbps PAM4 OM4 fiber link for extended reach to 1km. Optical Fiber Communication Conference, W2A.7(2022).

[34] K. Iga. VCSEL How was it born and grown since one-century after Edison?. International Semiconductor Laser Conference, SP-01(2022).

[35] K. D. Choquette, K. M. Geib, C. I. H. Ashby et al. Advances in selective wet oxidation of AlGaAs alloys. IEEE J. Sel. Top. Quantum Electron., 3, 916(1997).

[36] B. Weigl, M. Grabherr, C. Jung et al. High-performance oxide-confined GaAs VCSELs. IEEE J. Sel. Top. Quantum Electron., 3, 409(1997).

[37] M. H. MacDougal, P. D. Dapkus, V. Pudikov et al. Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors. IEEE Photon. Technol. Lett., 7, 229(1995).

[38] L. A. Coldren, S. W. Corzine, M. L. Mashanovitch. Diode Lasers and Photonic Integrated Circuits(2012).

[39] R. Michalzik. VCSELs(2013).

[40] R. Safaisini, K. Szczerba, P. Westbergh et al. High-speed 850 nm quasi-single-mode VCSELs for extended-reach optical interconnects. J. Opt. Commun. Netw., 5, 686(2013).

[41] C. C. Shen, T. C. Hsu, Y. W. Yeh et al. Design, modeling, and fabrication of high-speed VCSEL with data rate up to 50 Gb/s. Nanoscale Res. Lett., 14, 1(2019).

[42] M. Gębski, P. S. Wong, M. Riaziat et al. 30 GHz bandwidth temperature stable 980 nm vertical-cavity surface-emitting lasers with AlAs/GaAs bottom distributed Bragg reflectors for optical data communication. J. Phys. Photonics, 2, 035008(2020).

[43] D. G. Deppe, M. Li, X. Yang et al. Advanced VCSEL technology: self-heating and intrinsic modulation response. IEEE J. Quantum Electron., 54, 1(2018).

[44] A. N. Al-Omari, I. K. Al-Kofahi, K. L. Lear. Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical cavity lasers. Semicond. Sci. Technol., 24, 095024(2009).

[45] G. Reiner, E. Zeeb, B. Moller et al. Optimization of planar Be-doped InGaAs VCSEL’s with two-sided output. IEEE Photon. Technol. Lett., 7, 730(1995).

[46] K. Chi, D. Hsieh, J. Yen et al. 850-nm VCSELs with p-Type δ-doping in the active layers for improved high-speed and high-temperature performance. IEEE J. Quantum Electron., 52, 1(2016).

[47] Y. Chang, L. A. Coldren. Optimization of VCSEL structure for high-speed operation. IEEE 21st International Semiconductor Laser Conference, 159(2008).

[48] S. D. Offsey, W. J. Schaff, P. J. Tasker et al. Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers. IEEE Photon. Technol. Lett., 2, 9(1990).

[49] S. B. Healy, E. P. O’Reilly, J. S. Gustavsson et al. Active region design for high-speed 850-nm VCSELs. IEEE J. Quantum Electron., 46, 506(2010).

[50] Y. H. Chang, H. C. Kuo, F. I. Lai et al. Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs. J. Lightwave Technol., 22, 2828(2004).

[51] H. Li, X. Jia. Comparative study on strained InGaAs quantum wells for high-speed optical-interconnect VCSELs. Opt. Commun., 415, 1(2018).

[52] N. Heermeier, M. Gębski, N. Haghighi et al. Comparison of 850 nm VCSEL oxide aperture designs. Proc. SPIE, 11300, 97(2020).

[53] W. Hamad, S. Wanckel, W. H. E. Hofmann. Small-signal analysis of ultra-high-speed multi-mode VCSELs. IEEE J. Quantum Electron., 52, 1(2016).

[54] Y. C. Yang, H. T. Cheng, C. H. Wu. Single-channel 106.25 Gbps PAM-4 and 64 Gbps NRZ transmission with a 33.4-GHz 850-nm VCSEL with low-RIN characteristics. J. Lightwave Technol., 42, 293(2023).

[55] P. Westbergh, J. Gustavsson, B. Kögel et al. Impact of photon lifetime on high-speed VCSEL performance. IEEE J. Sel. Top. Quantum Electron., 17, 1603(2011).

[56] P. Westbergh, J. Gustavsson, B. Kögel et al. Speed enhancement of VCSELs by photon lifetime reduction. Electron. Lett., 46, S1(2010).

[57] E. P. Haglund, P. Westbergh, J. S. Gustavsson et al. Impact of damping on high-speed large signal VCSEL dynamics. J. Lightwave Technol., 33, 795(2014).

[58] H. Tong, Z. Wei, C. Tong et al. High-speed 850 nm vertical-cavity surface-emitting lasers with multilayer oxide aperture. 2022 IEEE 14th International Conference on Advanced Infocom Technology, 216(2022).

[59] M. Azuchi, N. Jikutani, M. Arai et al. Multi oxide layer vertical-cavity surface-emitting lasers with improved modulation bandwidth. The 5th Pacific Rim Conference on Lasers and Electro-Optics, 03TH8671(2003).

[60] Y. C. Chang, C. S. Wang, L. A. Johansson et al. High-efficiency, high-speed VCSELs with deep oxidation layers. Electron. Lett., 42, 1(2006).

[61] S. Hu, M. Ahmed, A. Bakry et al. Low chirp and high-speed operation of transverse coupled cavity VCSEL. Jpn. J. Appl. Phys., 54, 090304(2015).

[62] H. Dalir, F. Koyama. 29 GHz directly modulated 980 nm vertical-cavity surface emitting lasers with bow-tie shape transverse coupled cavity. Appl. Phys. Lett., 103, 091109(2013).

[63] K. Szczerba, P. Westbergh, M. Karlsson et al. 70 Gbps 4-PAM and 56 Gbps 8-PAM using an 850 nm VCSEL. J. Lightwave Technol., 33, 1395(2015).

[64] C. Kottke, C. Caspar, V. Jungnickel et al. High-speed DMT and VCSEL-based MMF transmission using pre-distortion. J. Lightwave Technol., 36, 168(2018).

[65] C. Kottke, C. Caspar, V. Jungnickel et al. High speed 160 Gb/s DMT VCSEL transmission using pre-equalization. 2017 Optical Fiber Communications Conference and Exhibition, 1(2017).

[66] A. Tyagi, T. Iwai, K. Yu et al. A 50 Gb/s PAM-4 VCSEL transmitter with 2.5-tap nonlinear equalization in 65-nm CMOS. IEEE Photon. Technol. Lett., 30, 1246(2018).

[67] U. Hecht, N. Ledentsov, H. Ordouei et al. Digital non-linear transmitter equalization for PAM-N-based VCSEL links enabling robust data transmission of 100 Gbit/s and beyond. Photonics, 10, 280(2023).

[68] C. J. Chang-Hasnain, Y. Zhou, M. C. Huang et al. High-contrast grating VCSELs. IEEE J. Sel. Top. Quantum Electron., 15, 869(2009).

[69] E. P. Haglund, S. Kumari, P. Westbergh et al. 20-Gbps modulation of silicon-integrated short-wavelength hybrid-cavity VCSELs. IEEE Photon. Technol. Lett., 28, 856(2016).

[70] D. Sun, W. Fan, P. Kner et al. Sub-mA threshold 1.5-µm VCSELs with epitaxial and dielectric DBR mirrors. IEEE Photon. Technol. Lett., 15, 1677(2003).

[71] A. Karim, S. Bjorlin, J. Piprek et al. Long-wavelength vertical-cavity lasers and amplifiers. IEEE J. Sel. Top. Quantum Electron., 6, 1244(2000).

[72] P. Goyal, S. Gupta, G. Kaur. Advances and improvements in VCSEL designing. International Conference on Electrical, Electronics, and Optimization Techniques, 4240(2016).

[73] D. L. Huffaker, L. A. Graham, H. Deng et al. Sub-40 µA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors. IEEE Photon. Technol. Lett., 8, 974(1996).

[74] R. A. Morgan, M. K. Hibbs-Brenner, J. A. Lehman et al. High-speed strained silicon vertical p-n diodes. Appl. Phys. Lett., 66, 1157(1995).

[75] M. Zhang, S. Li, N. Shi et al. Novel method for fiber chromatic dispersion measurement based on microwave photonic technique. Chin. Opt. Lett., 10, 070602(2012).

[76] A. B. Dar, R. K. Jha. Chromatic dispersion compensation techniques and characterization of fiber Bragg grating for dispersion compensation. Opt. Quantum Electron., 49, 1(2017).

[77] F. Koyama. Advances and new functions of VCSEL photonics. Opt. Rev., 21, 893(2014).

[78] C. J. Chang-Hasnain, J. P. Harbison, G. Hasnain et al. Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers. IEEE J. Quantum Electron., 27, 1402(1991).

[79] H. Zhang, G. Mrozynski, A. Wallrabenstein et al. Analysis of transverse mode competition of VCSELs based on a spatially independent model. IEEE J. Quantum Electron., 40, 18(2004).

[80] T. O’Brien, B. Kesler, S. Al Mulla et al. Mode behavior of VCSELs with impurity-induced disordering. IEEE Photon. Technol. Lett., 29, 1179(2017).

[81] P. Su, F. C. Hsiao, T. O’Brien et al. Wafer-scale method of controlling impurity-induced disordering for optical mode engineering in high-performance VCSELs. IEEE Trans. Semicond. Manuf., 31, 447(2018).

[82] J. Shi, Z. Wei, K. Chi et al. Single-mode, high-speed, and high-power vertical-cavity surface-emitting lasers at 850 nm for short to medium reach (2 km) optical interconnects. J. Lightwave Technol., 31, 4037(2013).

[83] Z. Khan, N. Ledentsov, L. Chorchos et al. Single-mode 940 nm VCSELs with narrow divergence angles and high-power performances for fiber and free-space optical communications. IEEE Access, 8, 72095(2020).

[84] A. Ghods, M. Dummer, G. Xu et al. Design and fabrication of single-mode multi-junction 905 nm VCSEL with integrated anti-phase mode filter. J. Lightwave Technol., 41, 3102(2023).

[85] R. A. Morgan, G. D. Guth, M. W. Foch et al. Transverse mode control of vertical-cavity top surface-emitting lasers. IEEE Photon. Technol. Lett., 5, 374(1993).

[86] N. Ueki, A. Sakamoto, T. Nakamura et al. Single-transverse-mode 3.4-mW emission of oxide-confined 780-nm VCSELs. IEEE Photon. Technol. Lett., 11, 1539(1999).

[87] H. Cheng, S. Min, Y. Yang et al. Single-mode-VCSEL with a ring-shaped self-aligned recessed metal mode filter. IEEE Electron Device Lett., 44, 1316(2023).

[88] R. A. Cendejas, M. C. Phillips, T. L. Myers et al. Single-mode, narrow-linewidth external cavity quantum cascade laser through optical feedback from a partial-reflector. Opt. Express, 18, 26037(2010).

[89] E. Şeker, S. Şengül, K. Dadashi et al. Single-mode operation of electrically pumped edge-emitting lasers through cavity coupling of high order modes. Proc. SPIE, 11983, 85(2022).

[90] F. Marino, S. Barland, S. Balle. Single-mode operation and transverse-mode control in VCSELs induced by frequency-selective feedback. IEEE Photon. Technol. Lett., 15, 789(2003).

[91] H. R. Ibrahim, A. M. Hassan, X. Gu et al. 1060nm single-mode metal-aperture VCSEL array with transverse resonance and low power consumption below 50 fj/bit. IEEE European Conference on Optical Communication (ECOC), 1(2021).

[92] F. Koyama. VCSEL photonics—advances and new challenges. IEICE Electron. Express, 6, 651(2009).

[93] C. J. Chang-Hasnain. Progress and prospects of long-wavelength VCSELs. IEEE Commun. Mag., 41, 64(2003).

[94] J. Piprek. High-temperature lasing of long-wavelength VCSELs: problems and prospects. Proc. SPIE, 3003, 182(1997).

[95] M. V. R. Murty, X. D. Huang, G. L. Liu et al. Long-wavelength VCSEL-based CWDM scheme for 10-GbE links. IEEE Photon. Technol. Lett., 17, 1286(2005).

[96] C. K. Lin, D. P. Bour, J. Zhu et al. High temperature continuous-wave operation of 1.3- and 1.55-µm VCSELs with InP/air-gap DBRs. IEEE J. Sel. Top. Quantum Electron., 9, 1415(2003).

[97] S. Spiga, W. Soenen, A. Andrejew et al. Single-mode high-speed 1.5-µm VCSELs. J. Lightwave Technol., 35, 727(2016).

[98] F. Salomonsson, K. Streubel, J. Bentell et al. Wafer fused p-InP/p-GaAs heterojunctions. J. Appl. Phys., 83, 768(1998).

[99] S. Rapp, F. Salomonsson, K. Streubel et al. All-epitaxial single-fused 1.55 µm vertical cavity laser based on an InP Bragg reflector. Jpn. J. Appl. Phys., 38, 1261(1999).

[100] V. Iakovlev, G. Suruceanu, A. Sirbu et al. Characteristics of the wafer-fused long-wavelength VCSEL structures. Mold. J. Phys. Sci., 1, 57(2002).

[101] V. Jayaraman, M. Mehta, A. W. Jackson et al. High-power 1320-nm wafer-bonded VCSELs with tunnel junctions. IEEE Photon. Technol. Lett., 15, 1495(2003).

[102] A. Mereuta, A. Sirbu, A. Caliman et al. Fabrication and performance of 1.3-µm 10-Gbps CWDM wafer-fused VCSELs grown by MOVPE. J. Cryst. Growth, 414, 210(2015).

[103] S. A. Blokhin, A. V. Babichev, A. G. Gladyshev et al. 20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region. Opt. Eng., 61, 096109(2022).

[104] T. Jouhti, O. Okhotnikov, J. Konttinen et al. Dilute nitride vertical-cavity surface-emitting lasers. New J. Phys., 5, 84(2003).

[105] S. R. Bank, H. Bae, L. L. Goddard et al. Recent progress on 1.55 µm dilute-nitride lasers. IEEE J. Quantum Electron., 43, 773(2007).

[106] M. Gębski, D. Dontsova, N. Haghighi et al. Baseline 1300 nm dilute nitride VCSELs. OSA Contin., 3, 1952(2020).

[107] T. Anan, N. Suzuki, K. Yashiki et al. High-speed 1.1-um-range InGaAs VCSELs. Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference IEEE, 1(2008).

[108] S. Mogg, N. Chitica, U. Christiansson et al. Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning. IEEE J. Quantum Electron., 40, 453(2004).

[109] P. Westbergh, E. Söderberg, J. Gustavsson et al. Single-mode 1.3 µm InGaAs VCSELs for access network applications. Proc. SPIE, 6997, 238(2008).

[110] T. Kondo, M. Arai, M. Azuchi et al. Singlemode fibre transmission using 1.2 µm band GaInAs/GaAs surface emitting laser. Electron. Lett., 38, 901(2002).

[111] S. Hu, X. Gu, H. R. Ibrahim et al. 5-km single-mode fiber data transmission with 1060nm single-mode intra-cavity surface relief transverse coupled cavity VCSELs. 28th International Semiconductor Laser Conference, 1(2022).

[112] N. N. Ledentsov. Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts. IEEE J. Sel. Top. Quantum Electron., 8, 1015(2002).

[113] D. Xu, C. Tong, S. F. Yoon et al. Room-temperature continuous-wave operation of the In(Ga) As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication. Semicond. Sci. Technol., 24, 055003(2009).

[114] A. Babichev, S. Blokhin, E. Kolodeznyi et al. Long-wavelength VCSELs: status and prospects. Photonics, 10, 268(2023).

[115] E. Simpanen, J. S. Gustavsson, A. Larsson et al. 1060 nm single-mode VCSEL and single-mode fiber links for long-reach optical interconnects. J. Lightwave Technol., 37, 2963(2019).

[116] J. Lavrencik, E. Simpanen, S. Varughese et al. Error-free 100Gbps PAM-4 transmission over 100 m OM5 MMF using 1060nm VCSELs. Optical Fiber Communication Conference, M1F.3(2019).

[117] Y. Rao, W. Yang, C. Chase et al. Long-wavelength VCSEL using high-contrast grating. IEEE J. Quantum Electron., 19, 1701311(2013).

[118] A. Babichev, L. Karachinsky, I. Novikov et al. 6-mW single-mode high-speed 1550-nm Wafer-fused VCSELs for DWDM application. IEEE J. Quantum Electron., 53, 1(2017).

[119] A. Babichev, S. Blokhin, A. Gladyshev et al. Single-mode high-speed 1550 nm wafer fused VCSELs for narrow WDM systems. IEEE Photon. Technol. Lett., 35, 297(2023).

[120] H. Isono. Latest standardization status and its future directions for high speed optical transceivers. Proc. SPIE, 10946, 11(2019).

[121] J. J. Maki. Evolution of pluggable optics and what is beyond. Optical Fiber Communication Conference, Th3A.2(2019).

[122] D. Piehler. Optical interconnects in enterprise and hyperscale datacenters. Proc. SPIE, 11286, 1128602(2020).

[123] H. Xu, M. Fields, R. Clark. Board mount client optics—prospects and challenges. Optical Fiber Communications Conference and Exhibition, 1(2016).

[124] F. E. Doany, B. G. Lee, D. M. Kuchta et al. Terabit/sec VCSEL-based 48-channel optical module based on holey CMOS transceiver IC. J. Light. Technol., 31, 672(2013).

[125] N. Kohmu, M. Ishii, T. Ishigure. High-density electrical and optical assembly for subminiature VCSEL-based optical engine. IEEE Trans. Compon. Packag. Manuf. Technol., 12, 27(2021).

[126] C. Minkenberg, R. Krishnaswamy, A. Zilkie et al. Co-packaged datacenter optics: opportunities and challenges. IET Optoelectron., 15, 77(2021).

[127] M. Vallo, P. Mukish. Global insights into the co-packaged technology platforms enabling transceivers with capacities of 1.6 Tbps and higher. Proc. SPIE, 12027, 141(2022).

[128] R. Mahajan, X. Li, J. Fryman et al. Co-packaged photonics for high performance computing: status, challenges and opportunities. J. Lightwave Technol., 40, 379(2021).

[129] E. Timurdogan, Z. Su, R. Shiue et al. 400G silicon photonics integrated circuit transceiver chipsets for CPO, OBO, and pluggable modules. Optical Fiber Communication Conference, T3H.2(2020).

[130] X. Shen, B. Chen, Y. Zhu et al. Silicon photonic integrated circuits and its application in data center. Proc. SPIE, 11763, 2110(2021).

[131] F. Koyama. High-speed VCSEL photonics for datacenter networks. Proc. SPIE, PC12141, PC1214104(2022).

[132] E. Haglund, M. Jahed, J. S. Gustavsson et al. High-power single transverse and polarization mode VCSEL for silicon photonics integration. Opt. Express, 27, 18892(2019).

[133] D. M. Kuchta, J. E. Proesel, F. E. Doany et al. Multi-wavelength optical transceivers integrated on node (MOTION). Optical Fiber Communications Conference and Exhibition, 1(2019).

[134] B. Wang, W. V. Sorin, P. Rosenberg et al. 4 × 112 Gbps/fiber CWDM VCSEL arrays for co-packaged interconnects. J. Lightwave Technol., 38, 3439(2020).

[135] H. Chen, C. Li, N. Fontaine et al. 10-mode-multiplexed transmitter employing 2-D VCSEL matrix. European Conference on Optical Communication, 1(2021).

[136] L. Dong, X. Gu, S. Hu et al. Densely packed 1.1 um band vertical cavity surface emitting laser array for co-packaged optics. Jpn. J. Appl. Phys., 61, SK1011(2022).

[137] L. Dong, X. Gu, F. Koyama. 16-ch 1060-nm single-mode bottom-emitting metal-aperture VCSEL array for co-packaged optics. Optical Fiber Communications Conference and Exhibition, 1(2023).

[138] T. Yagisawa, M. Miyoshi, J. Miike et al. Novel packaging structure using VCSEL array and multi-core fiber for co-packaged optics. IEEE CPMT Symposium Japan, 9(2022).