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Chinese Journal of Lasers, Volume. 25, Issue 4, 289(1998)

Theoretical Analysis for InGaAs(P) Strain compensated Multiple quantum well Lasers

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Theoretical Analysis for InGaAs(P) Strain compensated Multiple quantum well Lasers[J]. Chinese Journal of Lasers, 1998, 25(4): 289

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    Paper Information

    Category: Laser physics

    Received: Jan. 20, 1997

    Accepted: --

    Published Online: Oct. 18, 2006

    The Author Email:

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology