Microelectronics, Volume. 52, Issue 3, 399(2022)

Design of a General Equivalent Circuit for Fractional-Order Memory Element

SHANG Tao1, GAN Zhaohui1, YU Lei1, and ZUO Zihui2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(4)

    [1] [1] VENTRA M D, PERSHIN Y V, CHUA L O. Circuit elements with memory: memristors, memcapacitors, and meminductors [J]. Proceed IEEE, 2009, 97(10): 1717-1724.

    [4] [4] YUAN F, WANG G Y, JIN P P, et al. Chaos in a meminductor-based circuit [J]. Int J Bifurcation Chaos, 2016, 26(8): 1650130-1-1650130-14.

    [5] [5] PERSHIN Y V, VENTRA M D. Memristive circuits simulate memcapacitors and meminductors [J]. Elec Lett, 2010, 46(7): 517-518.

    [13] [13] BRAGOS R, ROSELL J, RIU P. A wide-band AC-coupled current source for electrical impedance tomography [J]. Physiological Measurement, 1994, (15): A91-A99.

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    SHANG Tao, GAN Zhaohui, YU Lei, ZUO Zihui. Design of a General Equivalent Circuit for Fractional-Order Memory Element[J]. Microelectronics, 2022, 52(3): 399

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    Paper Information

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    Received: Sep. 12, 2021

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210349

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