Journal of Infrared and Millimeter Waves, Volume. 43, Issue 1, 44(2024)

Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes

Jing-Hua SUN1, Wen-Juan WANG2、*, Yi-Cheng ZHU2,3, Zi-Lu GUO2,3, Yu-Fei QI2,3,5, and Wei-Ming XU4
Author Affiliations
  • 1School of Materials and Chemistry,the University of Shanghai for Science and Technology,Shanghai 200093,China
  • 2State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 3University of Chinese Academy of Sciences,Beijing 100049,China
  • 4Key Laboratory of Space Active Opto-Electronics Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 5Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • show less
    References(14)

    [13] Zhang Hang, Liu Dongbin, Li Shuai et al. Analysis of Total Dose Irradiation Test for InGaAs Detector[J]. Journal of Transduction Technology, 28, 19-22(2015).

    Tools

    Get Citation

    Copy Citation Text

    Jing-Hua SUN, Wen-Juan WANG, Yi-Cheng ZHU, Zi-Lu GUO, Yu-Fei QI, Wei-Ming XU. Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 44

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Research Articles

    Received: Mar. 31, 2023

    Accepted: --

    Published Online: Dec. 26, 2023

    The Author Email: Wen-Juan WANG (wangwj@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2024.01.007

    Topics