Chinese Optics Letters, Volume. 16, Issue 5, 050007(2018)
Fabrication of electrically contacted plasmonic Schottky nanoantennas on silicon
Fig. 1. Energy band diagram of a metal contact to a p-type semiconductor and the three steps of the internal photoemission process:
Fig. 2. Schematic of an Au/p-Si optical antenna Schottky contact diode for sub-bandgap detection. The materials used are Au for the antennas, p-Si for the epitaxial layer,
Fig. 3. Sketch of the main steps developed and applied to fabricate electrically contacted antenna arrays.
Fig. 4. (a) SEM image of a photoresist (S1805) lift-off resist (LOR-1A) stack after developing, showing a clean re-entrant profile. (b) E-beam layout of an antenna with its electrical interconnection line using structure redefinition to compensate for proximity effects. (c) Optical microscope image after e-beam writing and developing, showing an antenna array aligned with its electrical probing structure.
Fig. 5. (a)–(d) SEM images of fabricated structures. (a) View of a full structure comprising a bilayer of Au/Ti probing structure and an array of Au electrically contacted monopole antennas. (b), (c) Higher-magnification images of arrays. (d) Higher-magnification image of electrically contacted monopole antennas. (e) Atomic force microscope image of electrically contacted monopole antennas.
Fig. 6. Black curve shows an average of five dark
Fig. 7. Measured photocurrent response of two electrically contacted monopole array photodetectors (
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Mohammad Alavirad, Anthony Olivieri, Langis Roy, Pierre Berini, "Fabrication of electrically contacted plasmonic Schottky nanoantennas on silicon," Chin. Opt. Lett. 16, 050007 (2018)
Special Issue: ADVANCES IN METASURFACES
Received: Dec. 24, 2017
Accepted: Mar. 7, 2018
Published Online: Jul. 4, 2018
The Author Email: Pierre Berini (berini@eecs.uottawa.ca)