Acta Optica Sinica, Volume. 41, Issue 1, 0114004(2021)
Research Progress of Semiconductor Interband Cascade Lasers
Fig. 9. Energy band diagram of interband cascade laser with transition layer[109]
Fig. 11. Energy gap, energy band edge, and lattice constant of InAs, GaSb, and AlSb[120]
Fig. 12. Relationship between threshold current and temperature for short injection zone design[109]
Fig. 13. Energy band and carrier distributions of rebalancing of carriers[102]. (a) Electron injection zone with medium doping concentration of 4×1017 cm-3; (b) electron injection zone with heavy doping concentration of 5×1018 cm-3
Fig. 14. Refractive index and optical TE mode distribution of SCL at 800 nm in 7 cascade regions[115]
Fig. 15. Optical confinement factor for active region, waveguide cladding, separate confinement layers, and transition layer[115]
Fig. 16. 10 μm×10 μm atomic force microscope photo of interband cascade laser[61]
Fig. 18. SEM sidewall topography of an interband cascade laser with seven cascade cycles. (a) Methane-based etching;(b) BCl3-based etching[126]
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Yi Zhang, Cheng'ao Yang, Jinming Shang, Yihang Chen, Tianfang Wang, Yu Zhang, Yingqiang Xu, Bing Liu, Zhichuan Niu. Research Progress of Semiconductor Interband Cascade Lasers[J]. Acta Optica Sinica, 2021, 41(1): 0114004
Category: Lasers and Laser Optics
Received: Sep. 2, 2020
Accepted: Nov. 5, 2020
Published Online: Feb. 23, 2021
The Author Email: Zhang Yu (zhangyu@semi.ac.cn), Liu Bing (liubing@baqis.ac.cn), Niu Zhichuan (zcniu@semi.ac.cn)