Optical Instruments, Volume. 45, Issue 1, 80(2023)
Fabrication of semiconductor field effect transistor based on a flexible stencil
Figures & Tables(8)
Fig. 2. Schematic diagram of process flow of the device fabrication
Fig. 3. Schematic of CdSe nanobelts backgate field effect transistor
Fig. 4. Optical micrographs of channels with different sized stencil
Fig. 5. Optical micrographs of rigid shadow masked channels before and after metal deposition
Fig. 6. Optical micrographs of stenciled channels before and after treatment and CdSe nanobelts and PL spectra of CdSe nanobelts
Table 1. Parameters of the electrode pattern
View tableView in ArticleTable 1. Parameters of the electrode pattern
图案位置 d1/μm d2/μm d3/μm d4/μm r/μm ROW1 40 200 800 400 150 ROW2 40 200 800 400 150 ROW3 50 200 800 400 150 ROW4 50 200 800 400 150
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Yaru JIN, Jiaxin YU. Fabrication of semiconductor field effect transistor based on a flexible stencil[J]. Optical Instruments, 2023, 45(1): 80
Paper Information
Category: TECHNOLOGY
Received: Mar. 18, 2022
Accepted: --
Published Online: Mar. 20, 2023
The Author Email: Jiaxin YU (yujiaxin@usst.edu.cn)
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