Infrared and Laser Engineering, Volume. 54, Issue 3, 20240476(2025)

High order lateral coupled grating DFB semiconductor laser based on lateral loss structure

Zelong WANG1, Jie FAN1, Haizhu WANG1, Yonggang ZOU1, Linlin SHI1, and Chong ZHANG2
Author Affiliations
  • 1National Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
  • 2The First Military Representative Office of the Army Equipment Department Stationed in Changchun Area, Changchun 130000, China
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    References(19)

    [2] [2] SU J X. Research on lateral beam quality control of loss tailing microstructure diode laser[D]. Changchun: Changchun Institute of Optics, Fine Mechanics Physics, Chinese Academy of Sciences, 2021. (in Chinese)

    [8] ZHANG J, CHEN Y Y, QIN L. Advances in high power high beam quality diode lasers[J]. Chinese Science Bulletin, 62, 3719-3728(2017).

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    Zelong WANG, Jie FAN, Haizhu WANG, Yonggang ZOU, Linlin SHI, Chong ZHANG. High order lateral coupled grating DFB semiconductor laser based on lateral loss structure[J]. Infrared and Laser Engineering, 2025, 54(3): 20240476

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    Paper Information

    Category: Laser

    Received: Oct. 22, 2024

    Accepted: --

    Published Online: Apr. 8, 2025

    The Author Email:

    DOI:10.3788/IRLA20240476

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