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Acta Optica Sinica, Volume. 45, Issue 16, 1604002(2025)

Avalanche Uni-Traveling Carrier Photodetector with Electric Field Regulation Layer

Shiyao Liu, Kai Liu*, Yongqing Huang, Xiaofeng Duan, Qi Wang, and Shiwei Cai
Author Affiliations
  • State Key Laboratory of Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China
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    Figures & Tables(9)
    Epitaxial layer structure of ER-AUTC-PD

    Fig. 1. Epitaxial layer structure of ER-AUTC-PD

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    Internal electric field intensity, photogenerated current, frequency response, and parasitic capacitance of ER-AUTC-PD with different cliff-layer doping concentrations. (a) Internal electric field intensity distribution of the device at -10 V bias voltage; (b) internal electric field intensity distribution of the device at M=2.34 and responsivity of 0.5 A/W; (c) photogenerated current; (d) frequency response and parasitic capacitance

    Fig. 2. Internal electric field intensity, photogenerated current, frequency response, and parasitic capacitance of ER-AUTC-PD with different cliff-layer doping concentrations. (a) Internal electric field intensity distribution of the device at -10 V bias voltage; (b) internal electric field intensity distribution of the device at M=2.34 and responsivity of 0.5 A/W; (c) photogenerated current; (d) frequency response and parasitic capacitance

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    Internal electric field intensity, frequency response, and parasitic capacitance of ER-AUTC-PD with different EFRL doping concentrations. (a) Internal electric field intensity distribution of the device at -10 V bias voltage; (b) internal electric field intensity distribution of the device at M=2.34 and responsivity of 0.5 A/W; (c) frequency response and parasitic capacitance; (d) comparison of frequency response of device with and without EFRL

    Fig. 3. Internal electric field intensity, frequency response, and parasitic capacitance of ER-AUTC-PD with different EFRL doping concentrations. (a) Internal electric field intensity distribution of the device at -10 V bias voltage; (b) internal electric field intensity distribution of the device at M=2.34 and responsivity of 0.5 A/W; (c) frequency response and parasitic capacitance; (d) comparison of frequency response of device with and without EFRL

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    Internal electric field intensity, frequency response, and parasitic capacitance of ER-AUTC-PD with different collection layer thicknesses at M=2.34 and responsivity of 0.5 A/W. (a) Internal electric field intensity distribution of the device; (b) frequency response and parasitic capacitance

    Fig. 4. Internal electric field intensity, frequency response, and parasitic capacitance of ER-AUTC-PD with different collection layer thicknesses at M=2.34 and responsivity of 0.5 A/W. (a) Internal electric field intensity distribution of the device; (b) frequency response and parasitic capacitance

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    Comparison of internal electric field intensity distribution and electron transport velocity between ER-AUTC-PD and APD. (a) Electric field intensity; (b) electron transport velocity

    Fig. 5. Comparison of internal electric field intensity distribution and electron transport velocity between ER-AUTC-PD and APD. (a) Electric field intensity; (b) electron transport velocity

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    Optimization results for responsivity, 3 dB bandwidth, and GBP of ER-AUTC-PD. (a) Comparison of bandwidth and GBP characteristics between ER-AUTC-PD and APD; (b) gain factor‒bandwidth and gain factor‒responsivity curves of the ER-AUTC-PD with different diameters

    Fig. 6. Optimization results for responsivity, 3 dB bandwidth, and GBP of ER-AUTC-PD. (a) Comparison of bandwidth and GBP characteristics between ER-AUTC-PD and APD; (b) gain factor‒bandwidth and gain factor‒responsivity curves of the ER-AUTC-PD with different diameters

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    Comparison of optical response characteristics between ER-AUTC-PD and MUTC-PD. (a) Epitaxial structure of pre-optimized ER-AUTC-PD (MUTC-PD); (b) frequency response of ER-AUTC-PD and MUTC-PD at responsivity of 0.5 A/W

    Fig. 7. Comparison of optical response characteristics between ER-AUTC-PD and MUTC-PD. (a) Epitaxial structure of pre-optimized ER-AUTC-PD (MUTC-PD); (b) frequency response of ER-AUTC-PD and MUTC-PD at responsivity of 0.5 A/W

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    • Table 1. Material parameters used in the simulation

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      Table 1. Material parameters used in the simulation

      ParameterInPInGaAs
      Electron mobility /(cm2·V-1·s-1)532411599
      Hole mobility /(cm2·V-1·s-1)196331
      Electron staturation velocity /(107 cm·s-1)2.62.5
      Hole staturation velocity /(106 cm·s-1)6.585.00
      Band-gap /eV1.3500.734
      Electron affinity /eV4.504.38
      Permittivity /(C2·N-1·m-2)12.3513.90
      SRH lifetime /(10-9 s)1.010.0
      Selberherr’s parameters An,Ap /(106 cm-1)1.41, 2.1151.3, 73.0
      Selberherr’s parameters Bn,Bp /(106 V·cm-1)1.69, 1.771.95, 2.20
      Selberherr’s parameter βn, βp1.23, 1.151.00, 1.00
      Band-to-band parameterA /(1014 V-1·cm-1·s-1)4100000
      Band-to-band parameterB /(107 V·cm-1)1.973.00
      Band-to-band parameter γ2.52.0

    • Table 2. Summary of characteristics and performance metrics for ER-AUTC-PD and various APD devices

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      Table 2. Summary of characteristics and performance metrics for ER-AUTC-PD and various APD devices

      YearDeviceDimension /μmResponsivity /(A·W-1)Bandwidth /GHzGBP /GHzBias /VRef.
      2025InP/InGaAs ER-AUTC-PDΦ140.50163360.0-10.1 @ 63 GHzOurs
      2024InGaAs/InAlAs SAGCMCT-APDΦ140.5005790.00-19.0 @ 57 GHz[21]
      2024Ge/Si SACM-APD—~15.00~7225.8-29.5 @ 18 GHz[22]
      2020InGaAs/InAlAs SAGCMCT-APDΦ14~0.70024210.0-15.0 @ 24 GHz[19]
      2019InGaAs/InAlAs SAGM-APDΦ140.50042——[23]
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    Shiyao Liu, Kai Liu, Yongqing Huang, Xiaofeng Duan, Qi Wang, Shiwei Cai. Avalanche Uni-Traveling Carrier Photodetector with Electric Field Regulation Layer[J]. Acta Optica Sinica, 2025, 45(16): 1604002

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    Paper Information

    Category: Detectors

    Received: Mar. 14, 2025

    Accepted: May. 22, 2025

    Published Online: Aug. 7, 2025

    The Author Email: Kai Liu (kliu@bupt.edu.cn)

    DOI:10.3788/AOS250746

    CSTR:32393.14.AOS250746

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology