Researching | Structural color switching with a doped indium-gallium-zinc-oxide semiconductor

Photonics Research, Volume. 8, Issue 9, 1409(2020)

Structural color switching with a doped indium-gallium-zinc-oxide semiconductor

Inki Kim^1、†, Juyoung Yun^2、†, Trevon Badloe¹, Hyuk Park², Taewon Seo², Younghwan Yang¹, Juhoon Kim¹, Yoonyoung Chung^2,5, and Junsuk Rho^1,3,4、*

Author Affiliations

¹Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea

²Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea

³Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea

⁴National Institute of Nanomaterials Technology (NINT), Pohang 37673, South Korea

⁵e-mail: ychung@postech.ac.kr

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Inki Kim, Juyoung Yun, Trevon Badloe, Hyuk Park, Taewon Seo, Younghwan Yang, Juhoon Kim, Yoonyoung Chung, Junsuk Rho, "Structural color switching with a doped indium-gallium-zinc-oxide semiconductor," Photonics Res. 8, 1409 (2020)

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Paper Information

Category: Optical and Photonic Materials

Received: Apr. 21, 2020

Accepted: Jun. 21, 2020

Published Online: Jul. 27, 2020

The Author Email: Junsuk Rho (jsrho@postech.ac.kr)

DOI:10.1364/PRJ.395749

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology