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Journal of Semiconductors, Volume. 41, Issue 8, 080402(2020)

A new single-element layered two-dimensional semiconductor: black arsenic

Mianzeng Zhong and Jun He
Author Affiliations
  • Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
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    (Color online) (a) 3D crystal structures of b-As. (b) Transfer characteristics (Ids–Vg) of the monolayer b-As FET[5]. Copyright 2018 John Wiley and Sons.

    Fig. 1. (Color online) (a) 3D crystal structures of b-As. (b) Transfer characteristics (Ids–Vg) of the monolayer b-As FET[5]. Copyright 2018 John Wiley and Sons.

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    Mianzeng Zhong, Jun He. A new single-element layered two-dimensional semiconductor: black arsenic[J]. Journal of Semiconductors, 2020, 41(8): 080402

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    Received: --

    Accepted: --

    Published Online: Sep. 10, 2021

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    DOI:10.1088/1674-4926/41/8/080402

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology