Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Jian Yin; David Hwang; Hossein Zamani Siboni; Ehsanollah Fathi; Reza Chaji; Dayan Ban

doi:10.1007/s12200-024-00111-9

Frontiers of Optoelectronics, Volume. 17, Issue 1, 12200(2024)

Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Jian Yin¹, David Hwang², Hossein Zamani Siboni², Ehsanollah Fathi², Reza Chaji², and Dayan Ban^1、*

¹Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of Waterloo, Waterloo, ON N2L 3G1, Canada

²Vuereal InC., 440 Philip Street, Unit 100, Waterloo, ON N2L 5R9, Canada

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Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban. Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes[J]. Frontiers of Optoelectronics, 2024, 17(1): 12200

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Paper Information

Category: RESEARCH ARTICLE

Received: Aug. 8, 2023

Accepted: Mar. 3, 2024

Published Online: Aug. 8, 2024

The Author Email: Dayan Ban (dban@uwaterloo.ca)

DOI:10.1007/s12200-024-00111-9

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology