Chinese Journal of Lasers, Volume. 31, Issue 7, 857(2004)
Measuring the High-Frequency Characteristics of Chip Photodiodes
[1] [1] H. Elkadi, J. P. Vilcot, D. Decoster. An equivalent circuit model for multielectrode lasers:Potential devices for millimeterwave applications[J]. Microwave Opt. Technol. Lett., 1993, 6(4):245~249
[2] [2] P. Debie, L. Martens. Correction technique for on-chip modulation response measurements of optoelectronic devices[J]. IEEE Trans. Microwave Theory Tech., 1995, 43(6):1264~1269
[3] [3] N. H. Zhu, Y. Liu, E. Y. B. Pun et al.. Scattering-parameter measurements of laser diodes[J]. Optical and Quantum Electron., 2002, 34:747~757
[4] [4] P. Debie, L. Martens, D. Kaiser. Improved error correction technique for on-wafer lightwave measurements of photodetectors[J]. IEEE Photon. Technol. Lett., 1995, 7(4):418~420
[5] [5] P. D. Hale, T. S. Clement, D. F. Williams et al.. Measuring the frequency response of gigabit chip photodiodes[J]. J. Lightwave Technol., 2001, 19(9):1333~1339
[7] [7] R. A. Speciale. A generalization of the TSD Network-Analyzer calibration procedure, covering n-port scattering-parameter measurements, affected by leakage errors[J]. IEEE Trans. Microwave Theory Tech., 1977, 25(12):1100~1115
[8] [8] K. J. Silvonen. Calibration of test fixtures using at least two standards[J]. IEEE Trans. Microwave Theory Tech., 1991, 39(4):624~630
[9] [9] Ninghua Zhu. Phase uncertainty in calibrating microwave test fixtures[J]. IEEE Trans. Microwave Theory Tech., 1999, 47(10):1917~1922
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measuring the High-Frequency Characteristics of Chip Photodiodes[J]. Chinese Journal of Lasers, 2004, 31(7): 857