Journal of Synthetic Crystals, Volume. 54, Issue 4, 560(2025)

Effect of Residual Stress and Electric Field on Indentation Hardness of 4H-SiC Surface

ZHU Xingjie, ZHANG Ping, and ZUO Dunwen*
Author Affiliations
  • College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
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    ZHU Xingjie, ZHANG Ping, ZUO Dunwen. Effect of Residual Stress and Electric Field on Indentation Hardness of 4H-SiC Surface[J]. Journal of Synthetic Crystals, 2025, 54(4): 560

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    Paper Information

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    Received: Oct. 28, 2024

    Accepted: Jun. 5, 2025

    Published Online: Jun. 5, 2025

    The Author Email: ZUO Dunwen (imit505@nuaa.edu.cn)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0255

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