Acta Optica Sinica, Volume. 12, Issue 10, 897(1992)
Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method[J]. Acta Optica Sinica, 1992, 12(10): 897
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