Chinese Journal of Lasers, Volume. 15, Issue 5, 306(1988)
Formation and microstructure of silicon film deposited by laser light
The formation of silicon film deposited by pulsed Nd:YAG laser on glass and NaCl substracte is reported. The film thickness was about 200nm. The deposited silicon film was irradiated by pulsed ultraviolet laser. Formation and microstructure of the film were studied by infrared spectroscopy, X-ray diffraction diagram and electron microscopy. The formation stage of the deposited film was studied with a scanning electron microscope.
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Yang Jingran. Formation and microstructure of silicon film deposited by laser light[J]. Chinese Journal of Lasers, 1988, 15(5): 306
Category: laser devices and laser physics
Received: Feb. 2, 1987
Accepted: --
Published Online: Aug. 13, 2012
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CSTR:32186.14.