Fig. 1. SW p-on-n double layer planar heterostructure of US Teledyne^[6]

Fig. 2. Comparison of the quantum efficiencies of the US Teledyne SW detector with and without substrate removal^[3]

Fig. 3. US Raytheon device structure^[7]

Fig. 4. p-on-n planar structure of France^[11]

Fig. 5. The key technology of HgCdTe focal plane device with large array in France^[10]

Fig. 6. Infrared image detected by 2.7 k×2.7 k infrared focal plane detector^[12]

Fig. 7. n-on-p planar structure

Fig. 8. Package of SW 2 k×2 k, 18 μm pitch HgCdTe infrared detector

Fig. 9. High quality CZT wafers

Fig. 10. Transmittance curve

Fig. 11. The morphology of the film prepared by CZT-based liquid phase epitaxy

Fig. 12. Indium column array

Fig. 13. Operability at different working temperatures

Fig. 14. Device dark current distribution