Research of Single Event Response Characteristics of Trench Gate SiC MOSFET Devices

CHENG Guodong; LU Jiang; ZHAI Luqing; BAI Yun; TIAN Xiaoli; ZUO Xinxin; YANG Chengyue; TANG Yidan; CHEN Hong; LIU Xinyu

doi:10.13911/j.cnki.1004-3365.210313

Microelectronics, Volume. 52, Issue 3, 466(2022)

Research of Single Event Response Characteristics of Trench Gate SiC MOSFET Devices

CHENG Guodong^1,2, LU Jiang^1,2, ZHAI Luqing³, BAI Yun^1,2, TIAN Xiaoli^1,2, ZUO Xinxin^1,2, YANG Chengyue^1,2, TANG Yidan^1,2, CHEN Hong^1,2, and LIU Xinyu^1,2

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²[in Chinese]

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CHENG Guodong, LU Jiang, ZHAI Luqing, BAI Yun, TIAN Xiaoli, ZUO Xinxin, YANG Chengyue, TANG Yidan, CHEN Hong, LIU Xinyu. Research of Single Event Response Characteristics of Trench Gate SiC MOSFET Devices[J]. Microelectronics, 2022, 52(3): 466

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Received: Aug. 16, 2021

Accepted: --

Published Online: Jan. 18, 2023

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DOI:10.13911/j.cnki.1004-3365.210313

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology