The single event response characteristics of three 1 200 V trench gate SiC MOSFETs with different structures, including the conventional trench gate MOSFET, the double trench MOSFET and the asymmetric trench MOSFET, were studied and analyzed by using Sentaurus TCAD simulation software. The simulation results showed that the SEB SOA of the double trench MOSFET was superior than other two devices during the single event process. The advantage of double trench MOSFET was mainly related to the deep source trench structure, which contributed to the fast collection of the huge carriers generated by the heavy ions collision and suppressed the electrothermal coupling effect from current concentration. Moreover, compared with other two structures, the internal electrothermal coupling effect due to the huge carriers accumulation could be suppressed effectively. This effect was believed to be the main destroying mechanism related to the single event burnout.