Journal of Synthetic Crystals, Volume. 50, Issue 1, 60(2021)

Theoretical Simulation and Analysis of Ultrathin Heterojunction Solar Cells

CHE Jin1 and LU Haijiang2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(7)

    [1] [1] SAWADA T, TERADA N, TSUGE S, et al. High efficiency a-Si∶H/c-Si hererojunction solar cell[C]. Prcoeeding of the First WCPE Conference, Hawaii, USA, 1994: 1219-1226.

    [2] [2] STANGL R, FROITZHEIM A, SCHMIDT M, et al. Photovoltaic energy conversion[C].Proceeding of the 3th Word Conference, Osaka, Japan, 2003: 2100-2105.

    [7] [7] STRENGERS J J H, RUBINELLI F A, RATH J K, et al. A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells[J]. Thin Solid Films, 2006, 501(1/2): 291-294.

    [9] [9] XU X, YANG J, BANERJEE A, et al. Band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys and their effect on solar cell performance[J]. Applied Physics Letters, 1995, 67(16): 2323-2325.

    [12] [12] PATRA C, DAS D. Controlling superior crystallinity and conductivity in ultra-thin doped nc-Si layers via H2-plasma treatment for applications in nc-Si/c-Si heterojunction solar cells[C]//Proceedings of the International Conference on Physics of Materials and Nanotechnology Icpn 2019. Mangalore, India. AIP Publishing, 2020.

    [13] [13] SMITH D D, REICH G, BALDRIAS M, et al. Silicon solar cells with total area efficiency above 25%[C]//2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). June 5-10, 2016, Portland, OR, USA. IEEE, 2016: 3351-3355.

    [14] [14] TAGUCHI M, YANO A, TOHODA S, et al. 24.7% record efficiency HIT solar cell on thin silicon wafer[J]. IEEE Journal of Photovoltaics, 2014, 4(1): 96-99.

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    CHE Jin, LU Haijiang. Theoretical Simulation and Analysis of Ultrathin Heterojunction Solar Cells[J]. Journal of Synthetic Crystals, 2021, 50(1): 60

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    Paper Information

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    Received: Nov. 3, 2020

    Accepted: --

    Published Online: Apr. 15, 2021

    The Author Email:

    DOI:

    CSTR:32186.14.

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