A SiC single crystal boule with a diameter of 209 mm was grown by physical vapor transport (PVT) method with a diameter expansion technique. Standard 8inch SiC single crystal substrates were fabricated by using the processes of multiwire sawing, grinding, polishing and cleaning. Crystal polytype, crystal quality, micropipes, resistivity, stress, wafer shape, dislocation of a randomly selected 8inch substrate were characterized by Raman spectrometer, highresolution Xray diffractometer, optical microscope, resistivity tester, polarization stress meter, wafer flatness tester, and dislocation detector. Raman spectra show that 8inch substrate consists only 4H polytype. Xray rocking curves illustrate fullwidth at halfmaximum of the (004) peak between 10.44″ and 11.52″. Micropipe density is 0.04 cm-2 and the average resistivity is 0.020 3 Ω·cm. There is no stress concentration zone in the substrate with an evenly distributed stress. Warp and bow are 17.318 μm and -3.773 μm, respectively. The average dislocation density is 3 293 cm-2 by scanning the full area of the molten KOH etched 8inch substrate, among which the density of threading screw dislocation(TSD), threading edge dislocation(TED) and basal plane dislocation(BPD) are 81 cm-2, 3 074 cm-2 and 138 cm-2, respectively. All results indicate the high quality of the 8inch n type 4HSiC substrate, which reaches worldclass levels according to the comparsion with the industry standards.