Fig. 1. Reflection process (sputtering particles are reflected from substrate)

Fig. 2. Reflection probability versus incident angle. (a) Mo-on-Mo; (b) Si-on-Si; (c) Si-on-Mo

Fig. 3. Reflection probability versus incident energy. (a) Mo-on-Mo; (b) Si-on-Si; (c) Si-on-Mo

Fig. 4. Reflection angle distributions under different incident angles. (a) Mo-on-Mo; (b) Si-on-Si; (c) Si-on-Mo

Fig. 5. Reflection angle distributions under different incident energies. (a) Mo-on-Mo; (b) Si-on-Si; (c) Si-on-Mo

Fig. 6. Reflection energy distributions under different incident angles. (a) Mo-on-Mo; (b) Si-on-Si; (c) Si-on-Mo

Fig. 7. Reflection energy distributions under different incident energies. (a) Mo-on-Mo; (b) Si-on-Si; (c) Si-on-Mo

Fig. 8. Resputtering process

Fig. 9. Resputtering probability versus incident angle. (a) Mo-on-Mo; (b) Mo-on-Si

Fig. 10. Resputtering probability versus incident energy. (a) Mo-on-Mo; (b) Mo-on-Si

Fig. 11. Resputtering angle distributions under different incident angles. (a) Mo-on-Mo; (b) Mo-on-Si

Fig. 12. Resputtering angle distributions under different incident angles. (a) Mo-on-Mo; (b) Mo-on-Si

Fig. 13. Energy distributions of resputtered atoms under different incident angles. (a) Mo-on-Mo; (b) Mo-on-Si

Fig. 14. Energy distributions of resputtered atoms under different incident energies. (a) Mo-on-Mo; (b) Mo-on-Si

Fig. 15. TEM images of Mo/Si multilayers under different substrate inclination angles. (a) 0°; (b) 50°; (c) 70°