Optical properties and applications of SnS<sub>2</sub> SAs with different thickness

Mengli Liu; Hongbo Wu; Ximei Liu; Yaorong Wang; Ming Lei; Wenjun Liu; Wei Guo; Zhiyi Wei

doi:10.29026/oea.2021.200029

Opto-Electronic Advances, Volume. 4, Issue 10, 200029-1(2021)

Optical properties and applications of SnS₂ SAs with different thickness

Mengli Liu, Hongbo Wu, Ximei Liu, Yaorong Wang, Ming Lei, Wenjun Liu^*, Wei Guo^*, and Zhiyi Wei^*

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Figures & Tables(9)

Fig. 1. Characterization of materials. The AFM image, thickness and nonlinear absorption of (a,d,g)107 nm-SnS₂ SA, (b,e,h)7.7 nm-SnS₂ SA, (c,f,i)4 nm-SnS₂ SA.

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Fig. 2. The simplified representation of QSFL based on SnS₂.

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Fig. 3. The function of the QSFL based on 107 nm-SnS₂ SA. (a) The τ of a single pulse. (b) RF spectrum (illustration: RF spectrum within a bandwidth of 2 MHz). (c) Emission spectrum. (d) The monitoring of P_out within 8 hours. (e) Variation of τ and F_rep as functions of P_pump. (f) Variation of P_out and E_p as functions of P_pump.

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Fig. 4. The performance of the QSFL based on 7.7 nm-SnS₂ SA. (a) The τ of a single pulse. (b) The monitoring of P_out within 8 hours. (c) Variation of τ and F_rep as functions of P_pump. (d) Variation of P_out and E_p as functions of P_pump.

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Fig. 5. The performance of the QSFL based on 4 nm-SnS₂ SA. (a) The τ of a single pulse. (b) The monitoring of P_out within 8 hours. (c) Variation of τ and F_rep as functions of P_pump. (d) Variation of P_out and E_p as functions of P_pump.

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Fig. 6. The DFT calculated deformation potential limited electron mobility along k_x direction of SnS₂ vs. the number of SnS₂ layers.

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Table 1. The performance of three different QSFLs adopting distinct SA.

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Table 1. The performance of three different QSFLs adopting distinct SA.

SA	α_s/I_sat(MW/cm²)	Threshold(mW)	τ(μs)	F_rep (kHz)	Stability (mW)	P_out(mW)	E_p(nJ)
107 nm-SnS₂	40.5%/0.68	212	0.485−1.4	141−241	0.493	12.7	52.6
7.7 nm-SnS₂	36.9%/1.3	276	0.493−0.844	162−240	0.52	14.3	59
4 nm-SnS₂	31.5%/0.52	180	0.503−1.25	123−248	0.543	11.3	45.7

Table 2. Comparison of QSFL based on various SAs.

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Table 2. Comparison of QSFL based on various SAs.

Materilas	α_s (%)	∆λ/λ(nm)	F_rep(kHz)	τ(μs)	P_out/P_pump(mW)	Threshold(mW)	E_p(nJ)	SNR(dB)	Refs.
Graphene	−	0.02/1539.6	10.36−41.8	3.89	<1.2/65	13.5	28.7	30	ref.³⁴
BP	18.55	0.2/1562.87	6.983−15.78	13.2	~1.5/195	50	94.3	45	ref.³⁵
WS₂	2.53	−/1560	47.03~77.93	3.96	6.41/650	400	1179.4	54.2	ref.³⁶
MoS₂	2	−/1551.2	8.77−43.47	3.3	5.91/227	18.9	160	50	ref.³⁷
SnS₂	3.15	0.03/1532.7	172.3−233.0	0.510	9.33/632	290	~40	50	ref.³⁰
SnS₂	40.5	4.3/1530.6	141−241	0.485	12.7/630	180	45.7	50	This work

Table 3. The intrinsic carrier concentration (k_x) of SnS₂ vs. the number of SnS₂ layers.
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Table 3. The intrinsic carrier concentration (k_x) of SnS₂ vs. the number of SnS₂ layers.
Thickness Band gap n_ix (m⁻²)
1-Layer 1.57 eV 2.44×10⁺³
2-Layer 1.52 eV 6.74×10⁺³
4-Layer 1.39 eV 1.13×10⁺⁵
6-Layer 1.34 eV 4.73×10⁺⁵
8-Layer 1.27 eV 1.79×10⁺⁶

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Mengli Liu, Hongbo Wu, Ximei Liu, Yaorong Wang, Ming Lei, Wenjun Liu, Wei Guo, Zhiyi Wei. Optical properties and applications of SnS₂ SAs with different thickness[J]. Opto-Electronic Advances, 2021, 4(10): 200029-1

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Paper Information

Category: Original Article

Received: Jul. 10, 2020

Accepted: Sep. 29, 2020

Published Online: Dec. 28, 2021

The Author Email: Wenjun Liu (jungliu@bupt.edu.cn), Wei Guo (weiguo7@bit.edu.cn), Zhiyi Wei (zywei@iphy.ac.cn)

DOI:10.29026/oea.2021.200029

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. The performance of three different QSFLs adopting distinct SA.

Table 1. The performance of three different QSFLs adopting distinct SA.

Table 2. Comparison of QSFL based on various SAs.

Table 2. Comparison of QSFL based on various SAs.

Table 3. The intrinsic carrier concentration (kx) of SnS2 vs. the number of SnS2 layers.

Table 3. The intrinsic carrier concentration (kx) of SnS2 vs. the number of SnS2 layers.

Table 3. The intrinsic carrier concentration (k_x) of SnS₂ vs. the number of SnS₂ layers.

Table 3. The intrinsic carrier concentration (k_x) of SnS₂ vs. the number of SnS₂ layers.