Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

Jingbo Liu; Pingjian Li; Yuanfu Chen; Xinbo Song; Fei Qi; Binjie Zheng; Jiarui He; Qiye Wen; Wanli Zhang

doi:10.3788/COL201614.052301

Chinese Optics Letters, Volume. 14, Issue 5, 052301(2016)

Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

Jingbo Liu, Pingjian Li^*, Yuanfu Chen^**, Xinbo Song, Fei Qi, Binjie Zheng, Jiarui He, Qiye Wen, and Wanli Zhang

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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Jingbo Liu, Pingjian Li, Yuanfu Chen, Xinbo Song, Fei Qi, Binjie Zheng, Jiarui He, Qiye Wen, Wanli Zhang, "Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss," Chin. Opt. Lett. 14, 052301 (2016)

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Paper Information

Category: Optical devices

Received: Dec. 18, 2015

Accepted: Mar. 4, 2016

Published Online: Aug. 6, 2018

The Author Email: Pingjian Li (lipingjian@uestc.edu.cn), Yuanfu Chen (yfchen@uestc.edu.cn)

DOI:10.3788/COL201614.052301

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology