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Journal of Synthetic Crystals, Volume. 50, Issue 2, 381(2021)

Research Progress of GaAs Based 980 nm High Power Semiconductor Lasers

HU Xueying1、*, DONG Hailiang1, JIA Zhigang1, ZHANG Aiqin2, LIANG Jian3, and XU Bingshe1,4
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    HU Xueying, DONG Hailiang, JIA Zhigang, ZHANG Aiqin, LIANG Jian, XU Bingshe. Research Progress of GaAs Based 980 nm High Power Semiconductor Lasers[J]. Journal of Synthetic Crystals, 2021, 50(2): 381

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    Paper Information

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    Received: Nov. 17, 2020

    Accepted: --

    Published Online: Mar. 30, 2021

    The Author Email: Xueying HU (huxueying0957@link.tyut.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology