Fig. 1. Structure and performance of devices without and with Al₂O₃. (a) Structure diagram of two devices; (b) J-V curves of two devices at 850 nm (1.27 mW/cm²); (c) light-to-dark current ratio curves of two devices at 850 nm (1.27 mW/cm²); (d) energy level diagrams of two devices

Fig. 2. Characterization of Al₂O₃ modified device under 15 V bias voltage. (a) EQE spectrum; (b) transient response curves; (c) transient response curves under 1120, 1208, and 1310 nm light source irradiation; (d) f_{-3 dB} measurement results under modulated light source

Fig. 3. Characterizations of Al₂O₃ modified device under different light intensities. (a) Dynamic range under 505 nm light source; (b) EQE and responsibility under 505 nm light source within dynamic range; (c) specific detectivity under 505 nm light source within dynamic range; (d) dynamic range under 860 nm light source; (e) EQE and responsibility under 860 nm light source within dynamic range; (f) specific detectivity under 860 nm light source within dynamic range; (g) dynamic range under 1310 nm light source; (h) EQE and responsibility under 1310 nm light source within dynamic range; (i) specific detectivity under 1310 nm light source within dynamic range

Fig. 4. Mechanism analysis diagram of the device. (a) Transient response curves of pure P3HT thin film as active layer and Al₂O₃ modified devices; (b) absorption spectra of P3HT, Y6, and P3HT∶Y6 (100∶1); (c) Raman spectra of P3HT and P3HT∶Y6 (100∶1); (d) photoluminescence spectra of P3HT and P3HT∶Y6 (100∶1) excited by a 325 nm light source; (e) principle schematic of intermolecular charge transfer formation