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Chinese Journal of Lasers, Volume. 15, Issue 11, 701(1988)

Fabrication of SOI structure by means of laser annealed neutron-irradiated single crystal silicon

Wang Shen1, Li Qiong2, and Lin Chenglu2
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  • 1[in Chinese]
  • 2[in Chinese]
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    A semiconductor on semiinsulator (SOI) structure was obtained in which the insulator substrate is neutron-irradiated silicon, then annealed with CW Ar+ or Q switched Nd; YAG laser, semiconductor layer was obtained and the implanted impurities in it was activated. The experimental results proved it to be an ideal material for developing SOI devices by low-temperature process.

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    Wang Shen, Li Qiong, Lin Chenglu. Fabrication of SOI structure by means of laser annealed neutron-irradiated single crystal silicon[J]. Chinese Journal of Lasers, 1988, 15(11): 701

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    Paper Information

    Category: laser manufacturing

    Received: --

    Accepted: --

    Published Online: Aug. 13, 2012

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology