High Power Laser and Particle Beams, Volume. 34, Issue 6, 063003(2022)
Circuit simulation of GJB151B CS115 part П: The analysis of application
Figures & Tables(15)
Fig. 4. Simulated voltage across the terminal load (
Fig. 5. Simulated voltage across the terminal load (
Fig. 6. Simulated normalized voltage across the terminal load (
Fig. 7. Simulated voltage across the terminal load (
Fig. 8. Simulated normalized voltage across the terminal load (
Fig. 9. Simulated voltage across the terminal load (
Fig. 10. Simulated voltage across the terminal load of the inner conductor (
Fig. 11. Simulated voltage across the terminal load of the inner conductor (
Fig. 12. Simulated voltage across the terminal load of the inner conductor (
Fig. 13. Simulated voltage across the terminal load of the inner conductor (
Table 1. Rise time of coupling voltage with different length and injected point of the wire
View tableView in ArticleTable 1. Rise time of coupling voltage with different length and injected point of the wire
lw/m rise time/ns Dinj=0.75lw Dinj=0.5lw Dinj=0.25lw Dinj=0.125lw 0.5 5 6 7 7 1.0 10 12 13 13 1.5 13 16 20 20
Table 2. Transfer impedance of different coaxial cables
View tableView in ArticleTable 2. Transfer impedance of different coaxial cables
cable Rdc/mΩ Lt/nH RG-58 14.2 1.00 RG-303 14.1 0.43 RG-222 6.6 0.92 RG-316 26.8 0.88 RG-108 17.6 4.60
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Zhitong Cui, Wei Chen, Yayun Dong, Xin Nie, Wei Wu, Zheng Liu. Circuit simulation of GJB151B CS115 part П: The analysis of application[J]. High Power Laser and Particle Beams, 2022, 34(6): 063003
Paper Information
Category: High Power Microwave Technology
Received: Nov. 19, 2021
Accepted: --
Published Online: Jun. 2, 2022
The Author Email: Zhitong Cui (zhitong_cui@163.com)
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