[1] [1] Liu Guangyou, Tan Xingwen, Yao Jincai, et al.. Black silicon antireflection thin film prepared by electrochemical etching[J]. Acta Physica Sinica, 2008, 57(1): 514-518.

[2] [2] Jiang Jing, Wu Zhiming, Wang Tao, et al.. A new revolutionary material—black silicon[J]. Materials Review, 2010, 24(4): 122-126.

[3] [3] Fang Yingcui, Xie Zhiqiang, Zhao Youyuan, et al.. Photoluminescence enhancement of Si nanocrystals by CeF3 doping[J]. Journal of Vacuum Science and Technology, 2005, 25(5): 335-366.

[4] [4] C Wu, C H Crouch, L Zhao, et al.. Visible luminescence from silicon surfaces microstructured in air[J]. Applied Physics Letters, 2002, 81(11): 1999-2001.

[5] [5] Men Haining, Cheng Guanghua, Sun Chuandong. Microstructure and fluorescence property of silicon fabricated by femtosecond laser[J]. High Power Laser and Particle Beams, 2006, 18(7): 1081-1084.

[6] [6] Zhang Lidian, Shen Honglie, Yue Zhihao. Preparation and property of antireflective complex structures on multicrystalline silicon surface[J]. Acta Optica Sinica, 2013, 33(6): 0631002.

[7] [7] Wu Shaohua, Zang Jingcun, Han Ye, et al.. Luminescence of porous silicon wafers fabricated by electrochemical method[J]. Spectroscopy and Spectral Analysis, 1995, 15(2): 113-118.

[8] [8] Zhang Lexin, Li Zhiquan, Li Kuiying. Electrochemical fabrication and microstructure study of porous silicon[J]. Journal of Yanshan University, 2006, 30(2): 177-180.

[9] [9] T H Her, R J Finlay, C Wu, et al.. Microstructuring of silicon with femtosecond laser pulses[J]. Applied Physics Letters, 1998, 73(12): 1673-1675.

[10] [10] J E Carey, E Mazur. Femtosecond laser-assisted microstructuring of silicon for novel detector, sensing and display technologies[J]. Lasers and Electro-Optics Society, 2003, 2: 481-482.

[11] [11] Gao Shengmiao, Han Peigao, Yan Kezhu. Research progress of femtosecond laser fabricating silicon-based micro/nano structure[J]. Laser & Optoelectronics Progress, 2013, 50(11): 110002.

[12] [12] Liu Zhi, Zhang Xu, He Chao, et al.. Progress in study of Si-based group Ⅳ optoelectronic devices ( Ⅰ) —lasers[J]. Laser & Optoelectronics Progress, 2014, 51(11): 110001.

[13] [13] Yang Huan, Huang Shan, Duan Jun, et al.. Contrastive study on laser ablation of single-crystal silicon by 1030 nm femtosecond laser and 355 nm nanosecond laser[J]. Chinese J Lasers, 2013, 40(1): 0103003.

[14] [14] Z Chen, Q Wu, M Yang, et al.. Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases[J]. Laser and Particle Beams, 2013, 31(3): 539-545.

[15] [15] L A Nesbit. Annealing characteristics of Si-rich SiO2 films[J]. Applied Physics Letters, 1985, 46(1): 38-40.

[16] [16] Wang Xiyuan, Huang Yongguang, Liu Dewei, et al.. Fabrication of tellurium doped silicon detector by femtosecond laser and excimer laser[J]. Chinese J Lasers, 2013, 40(3): 0302001.

[17] [17] Z Chen, Q Wu, M Yang, et al.. Time-resolved photoluminescence of silicon microstructures fabricated by femtosecond laser in air[J]. Optics Express, 2013, 21(18): 21329-21336.

[18] [18] M J Smith, Y T Lin, M J Sher, et al.. Pressure-induced phase transformations during femtosecond-laser doping of silicon[J]. Journal of Applied Physics, 2011, 110(5): 053524.

[19] [19] M A Sheehy, L Winston, J E Carey, et al.. Role of the background gas in the morphology and optical properties of lasermicrostructured silicon[J]. Chemistry of Materials, 2005, 17(14): 3582-3586.

[20] [20] B R Tull, M T Winkler, E Mazur. The role of diffusion in broadband infrared absorption in chalcogen-doped silicon[J]. Applied Physics A, 2009, 96(2): 327-334.