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Journal of Synthetic Crystals, Volume. 52, Issue 6, 1067(2023)

Research Progress on Numerical Simulation of Single Crystal Silicon Carbide Prepared by Top-Seeded Solution Growth Method

SUI Zhanren1,2、*, XU Lingbo1,2, CUI Can1, WANG Rong2,3, YANG Deren2,3, PI Xiaodong2,3, and HAN Xuefeng2,3
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    SUI Zhanren, XU Lingbo, CUI Can, WANG Rong, YANG Deren, PI Xiaodong, HAN Xuefeng. Research Progress on Numerical Simulation of Single Crystal Silicon Carbide Prepared by Top-Seeded Solution Growth Method[J]. Journal of Synthetic Crystals, 2023, 52(6): 1067

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    Paper Information

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    Received: Jan. 13, 2023

    Accepted: --

    Published Online: Aug. 13, 2023

    The Author Email: SUI Zhanren (imszr@qq.com)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology