As a wide bandgap semiconductor, silicon carbide (SiC) has great potential in the applications of high-power, high-temperature and high-frequency power electronics owing to its excellent properties such as high breakdown electric field, high thermal conductivity, high thermal and chemical stability, and radiation resistance. The prerequisite of the widespread applications of SiC devices is to obtain large-size, high-quality and low-cost single crystal SiC. The single crystal SiC prepared by top-seeded solution growth (TSSG) method has the advantages of high crystal quality, easy diameter expansion and easy p-type doping. However, the key issue of this method is its complex growth mechanism, which has not been well understood, and it is difficult for researchers to effectively improve and optimize TSSG growth equipment and methods. Numerical simulation is considered as an effective way to explore single crystal SiC growth by TSSG method. Firstly, the fundamentals of single crystal SiC grown by TSSG method and the related numerical simulations are introduced. Main factors such as Marangoni force, buoyancy force and electromagnetic force affecting single crystal SiC growth are discussed together with the optimization of the numerical models. Finally, the key directions of the future research on the TSSG of single crystal SiC are proposed.