Research Progress of Aluminum Gallium Nitride Based Deep Ultraviolet Light Emitting Diodes

Yu Li; Yong Huang; Yuan Li; Hao Jiang

doi:10.3788/LOP231080

Laser & Optoelectronics Progress, Volume. 61, Issue 9, 0900002(2024)

Research Progress of Aluminum Gallium Nitride Based Deep Ultraviolet Light Emitting Diodes

Yu Li¹, Yong Huang^2、*, Yuan Li³, and Hao Jiang⁴

Author Affiliations

¹School of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, Guangdong, China

²Guangdong Industrial Training Center,Guangdong Polytechnic Normal University, Guangzhou 510665, Guangdong, China

³School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, Guangdong, China

⁴School of Automation,Guangdong Polytechnic Normal University, Guangzhou 510665, Guangdong, China

show less

Abstract Get PDF(in Chinese)

Cited By

Article index updated: Sep. 9, 2025

The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)

Tools

Get Citation

Copy Citation Text

Yu Li, Yong Huang, Yuan Li, Hao Jiang. Research Progress of Aluminum Gallium Nitride Based Deep Ultraviolet Light Emitting Diodes[J]. Laser & Optoelectronics Progress, 2024, 61(9): 0900002

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Reviews

Received: Apr. 13, 2023

Accepted: May. 24, 2023

Published Online: May. 10, 2024

The Author Email: Yong Huang (gsdhuangy@gpnu.edu.cn)

DOI:10.3788/LOP231080

CSTR:32186.14.LOP231080

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology