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Chinese Journal of Lasers, Volume. 28, Issue 6, 497(2001)

Effect of Electron Radiation in 1.3 μm InGaAsP Semicou ductor Laser

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [1] [1] Tadashi Saitoh, Takaaki Mukai. 1.5 μm GaInAsP traveling-wave semiconductor laser amplifier. IEEE J. Quantum Electron., 1987, 23(6):1010～1020

    [2] [2] Tadashi Saitoh, Takaaki Mukui, Osamu Mikmi. Theoretical analysis and fabrication of antireflection coatings on laser-diode facets. J. Lightwave Techn ol., 1985, LT-3(2):288～293

    [4] [4] Haruo Nagai, Yoshio Nogushi, Shoichi Sudo. High-power, high-efficiency 1.3μm superluminescent diode with a buried bent absorbing guide structure. Appl. Phys. Lett., 1989, 54(18):1719～1721

    [6] [6] Huang Dexiu. Photoelectronics of Semiconductor. University of Electronic Sci. & Tech. of China Press, 1984. 110～127 (in Chinese)

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    [1] Chang Guolong, Zhou Yanping, Zhou Jianqiang, Ma Jing, Wang Lili, Du Wenhe, Li Mi. Impact of Space Radiation to Semiconductor Laser[J]. Chinese Journal of Lasers, 2008, 35(s2): 5

    [2] WANG Zujun, NING Hao, XUE Yuanyuan, XU Rui, JIAO Qianli, LIU Minbo, YAO Zhibin, MA Wuying, SHENG Jiangkun, DONG Guantao. Research Progresses of Radiation Damage Experiments in Laser Diodes[J]. Semiconductor Optoelectronics, 2020, 41(2): 151

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of Electron Radiation in 1.3 μm InGaAsP Semicou ductor Laser[J]. Chinese Journal of Lasers, 2001, 28(6): 497

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    Paper Information

    Category: Laser physics

    Received: Nov. 2, 1999

    Accepted: --

    Published Online: Aug. 10, 2006

    The Author Email:

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology