Laser & Optoelectronics Progress, Volume. 59, Issue 23, 2314004(2022)
Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer
Fig. 2. Carrier distributions in the active regions of three DUV-LDs. (a) Hole concentration of the active region after introducing HRL; (b) electron concentration of the active region; (c) hole concentration of the active region; (d) radiative recombination rate of the active region
Fig. 6. Band diagram of five-stepped HRL at different positions in DUV-LD. (a) Position 1; (b) position 2; (c) position 3
Fig. 7. Carrier distribution in active region of five-step HRL at different positions in DUV-LD. (a) Electron concentration distribution; (b) maximum electron/hole concentration in quantum well; (c) radiative recombination rate
Fig. 8. Electrical characteristics of five-step HRL at different positions in DUV-LD
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Mengzhen Wang, Yao Wang, Shiqin Wei, Fang Wang, Zhi Quan, Yuhuai Liu. Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer[J]. Laser & Optoelectronics Progress, 2022, 59(23): 2314004
Category: Lasers and Laser Optics
Received: Oct. 15, 2021
Accepted: Nov. 16, 2021
Published Online: Nov. 28, 2022
The Author Email: Liu Yuhuai (ieyhliu@zzu.edu.cn)