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Laser & Optoelectronics Progress, Volume. 59, Issue 23, 2314004(2022)

Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer

Mengzhen Wang1, Yao Wang1, Shiqin Wei1, Fang Wang1,2, Zhi Quan1, and Yuhuai Liu1,2,3、*
Author Affiliations
  • 1National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 2Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, Henan, China
  • 3Research Institute of Industrial Technology, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (8)
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    References (29)
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    Figures & Tables(8)
    Schematic diagram of the cross-section of three DUV-LDs

    Fig. 1. Schematic diagram of the cross-section of three DUV-LDs

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    Carrier distributions in the active regions of three DUV-LDs. (a) Hole concentration of the active region after introducing HRL; (b) electron concentration of the active region; (c) hole concentration of the active region; (d) radiative recombination rate of the active region

    Fig. 2. Carrier distributions in the active regions of three DUV-LDs. (a) Hole concentration of the active region after introducing HRL; (b) electron concentration of the active region; (c) hole concentration of the active region; (d) radiative recombination rate of the active region

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    Electrical properties of three DUV-LDs. (a) V-I curve; (b) P-I curve

    Fig. 3. Electrical properties of three DUV-LDs. (a) V-I curve; (b) P-I curve

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    Photoelectric conversion efficiency of three DUV-LDs

    Fig. 4. Photoelectric conversion efficiency of three DUV-LDs

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    Five-step HRL at different positions in DUV-LD

    Fig. 5. Five-step HRL at different positions in DUV-LD

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    Band diagram of five-stepped HRL at different positions in DUV-LD. (a) Position 1; (b) position 2; (c) position 3

    Fig. 6. Band diagram of five-stepped HRL at different positions in DUV-LD. (a) Position 1; (b) position 2; (c) position 3

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    Carrier distribution in active region of five-step HRL at different positions in DUV-LD. (a) Electron concentration distribution; (b) maximum electron/hole concentration in quantum well; (c) radiative recombination rate

    Fig. 7. Carrier distribution in active region of five-step HRL at different positions in DUV-LD. (a) Electron concentration distribution; (b) maximum electron/hole concentration in quantum well; (c) radiative recombination rate

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    Electrical characteristics of five-step HRL at different positions in DUV-LD

    Fig. 8. Electrical characteristics of five-step HRL at different positions in DUV-LD

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    Mengzhen Wang, Yao Wang, Shiqin Wei, Fang Wang, Zhi Quan, Yuhuai Liu. Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer[J]. Laser & Optoelectronics Progress, 2022, 59(23): 2314004

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Oct. 15, 2021

    Accepted: Nov. 16, 2021

    Published Online: Nov. 28, 2022

    The Author Email: Liu Yuhuai (ieyhliu@zzu.edu.cn)

    DOI:10.3788/LOP202259.2314004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology