Laser annealing of SiO<sub>2</sub> film deposited by ICPECVD for fabrication of silicon based low loss waveguide

Ya’nan WANG; Yi LUO; Changzheng SUN; Bing XIONG; Jian WANG; Zhibiao HAO; Yanjun HAN; Lai WANG; Hongtao LI

doi:10.1007/s12200-016-0616-1

Frontiers of Optoelectronics, Volume. 9, Issue 2, 323(2016)

Laser annealing of SiO₂ film deposited by ICPECVD for fabrication of silicon based low loss waveguide

Ya’nan WANG, Yi LUO^*, Changzheng SUN, Bing XIONG, Jian WANG, Zhibiao HAO, Yanjun HAN, Lai WANG, and Hongtao LI

Tsinghua National Laboratory for Information Science and Technology/State Key Lab of Integrated Optoelectronics,Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

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Ya’nan WANG, Yi LUO, Changzheng SUN, Bing XIONG, Jian WANG, Zhibiao HAO, Yanjun HAN, Lai WANG, Hongtao LI. Laser annealing of SiO₂ film deposited by ICPECVD for fabrication of silicon based low loss waveguide[J]. Frontiers of Optoelectronics, 2016, 9(2): 323

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Paper Information

Category: RESEARCH ARTICLE

Received: Jan. 31, 2016

Accepted: Feb. 17, 2016

Published Online: Oct. 21, 2016

The Author Email: Yi LUO (luoy@tsinghua.edu.cn)

DOI:10.1007/s12200-016-0616-1

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology