Chinese Journal of Lasers, Volume. 33, Issue suppl, 240(2006)
980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser
[3] [3] A. Garnache, A. A. Kachanov, F. Stoeckel et al.. Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy [J]. J. Opt. Soc. Am. B, 2002, 17(9): 1589~1598
[4] [4] Mark Kuznetsov, Farhad Hakimi, Robert Sprague et al.. Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J]. IEEE J. Sel. Top. Quantum Electron., 1999, 5(3): 561~573
[7] [7] Wang Shunquan, Hu Hongzhang, Xiao Lifeng et al.. A novel temperature sensor based on acousto-optic tunable filter [J]. Chinese J. Lasers, 2003, 30(11): 1006~1010
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser[J]. Chinese Journal of Lasers, 2006, 33(suppl): 240