Chinese Journal of Lasers, Volume. 33, Issue suppl, 240(2006)

980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser

[in Chinese]1,2、*, [in Chinese]1,2, [in Chinese]1,2, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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    References(3)

    [3] [3] A. Garnache, A. A. Kachanov, F. Stoeckel et al.. Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy [J]. J. Opt. Soc. Am. B, 2002, 17(9): 1589~1598

    [4] [4] Mark Kuznetsov, Farhad Hakimi, Robert Sprague et al.. Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J]. IEEE J. Sel. Top. Quantum Electron., 1999, 5(3): 561~573

    [7] [7] Wang Shunquan, Hu Hongzhang, Xiao Lifeng et al.. A novel temperature sensor based on acousto-optic tunable filter [J]. Chinese J. Lasers, 2003, 30(11): 1006~1010

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser[J]. Chinese Journal of Lasers, 2006, 33(suppl): 240

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    Paper Information

    Category: Beam transmission

    Received: --

    Accepted: --

    Published Online: Apr. 21, 2006

    The Author Email: (shanxiaon@sina.com)

    DOI:

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