Considering the new requirements for multiple frequencies and high integration in RF front-end devices for future mobile communication, this study examines a novel laterally excited Lamb wave resonator that exhibits both SAW and FBAR technical characteristics.The structure design, parameter optimization, and preparation method for a C-band laterally excited bulk acoustic resonator (XBAR) based on a c-axis optimally oriented aluminum nitride piezoelectric film are proposed, and the process is validated.Two XBAR samples with spurious mitigation were fabricated using lift-off and ICP-RIE, achieving a resonant frequency of 4.464 GHz, a quality factor of 3 039, and an f×Q product of 1.56×1013 GHz in a footprint smaller than 0.12 mm2 .The application potential of the prepared resonators in an RF filter was simulated and analyzed.This study provides an effective design and process technology support for the further development of multi-frequency and highly integrated miniaturized filter modules.