Effect of Growth Pressure on Properties of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Molecular Beam Epitaxy

CAI Wenwei; LIU Xiangwei; WANG Hao; WANG Jianyuan; ZHENG Licheng; WANG Yongjia; ZHOU Yinghui; YANG Xu; LI Jinchai; HUANG Kai; KANG Junyong

Journal of Synthetic Crystals, Volume. 51, Issue 7, 1152(2022)

Effect of Growth Pressure on Properties of β-Ga₂O₃ Thin Films Grown by Molecular Beam Epitaxy

CAI Wenwei^1、*, LIU Xiangwei¹, WANG Hao¹, WANG Jianyuan¹, ZHENG Licheng¹, WANG Yongjia¹, ZHOU Yinghui¹, YANG Xu^1,2, LI Jinchai^1,2, HUANG Kai^1,2, and KANG Junyong¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

Abstract Get PDF(in Chinese)

Figures & Tables(0)

Tools

Get Citation

Copy Citation Text

CAI Wenwei, LIU Xiangwei, WANG Hao, WANG Jianyuan, ZHENG Licheng, WANG Yongjia, ZHOU Yinghui, YANG Xu, LI Jinchai, HUANG Kai, KANG Junyong. Effect of Growth Pressure on Properties of β-Ga₂O₃ Thin Films Grown by Molecular Beam Epitaxy[J]. Journal of Synthetic Crystals, 2022, 51(7): 1152

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category:

Received: Apr. 15, 2022

Accepted: --

Published Online: Aug. 12, 2022

The Author Email: Wenwei CAI (1182439841@qq.com)

DOI:

CSTR:32186.14.

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology