Photonics Research, Volume. 8, Issue 10, 1551(2020)

Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon Spotlight on Optics

Aditya Malik1、†,*, Joel Guo1、†, Minh A. Tran1,2、†, Geza Kurczveil3, Di Liang3, and John E. Bowers1
Author Affiliations
  • 1Department of Electrical & Computer Engineering, University of California, Santa Barbara, California 93106, USA
  • 2Nexus Photonics, Goleta, California 93117, USA
  • 3Hewlett Packard Labs, Palo Alto, California 94304, USA
  • show less
    Figures & Tables(11)
    Schematic diagram of (a) two-ring Vernier and (b) two-ring Vernier with MZI tunable laser. Electrical contacts are shown in gold.
    (a) LIV characteristics of the Vernier ring laser when both rings are unbiased. (b) Spectral characteristics showing ring mode hops and cavity mode hops. (c) OSA trace at 290 mA drive current (curve has been truncated in the middle) showing both ground state and excited state lasing can be observed. (d) LIV characteristics of the Vernier ring laser when ring one is unbiased and ring two has 45.8 mW electrical power applied. (e) Spectral characteristics showing only cavity mode hops. (f) OSA trace at 290 mA drive current showing only ground-state lasing.
    (a) LIV characteristics of the Vernier ring MZI laser. (b) Spectral characteristics showing cavity mode hops.
    Lasing wavelength as a function of the applied heater power for (a) the first ring and (b) the second ring.
    Tuning map of the Vernier ring laser showing (a) peak wavelength and (b) SMSR.
    Vernier ring laser: (a) automatically measured spectra over the entire tuning range and (b) manually optimized spectrum at a single point showing 52 dB SMSR.
    Vernier ring MZI laser: (a) automatically measured spectra over the entire tuning range and (b) manually optimized spectrum at a single point showing 58 dB SMSR.
    (a) Coefficients A, B, F calculated for the Vernier ring laser cavity as functions of detuning from the ring resonance peak with αH=2. (b) Estimated Lorentzian linewidth as a function of linewidth enhancement factor. A waveguide loss of 5 dB/cm and an output power of 10 mW were used in the calculation.
    Measured Lorentzian linewidth as a function of wavelength for (a) Vernier ring laser and (b) Vernier ring MZI laser.
    Measured frequency noise of the Vernier ring MZI laser in logarithmic scale over complete frequency range.
    • Table 1. Comparison of O-Band Single Wavelength Lasers on Silicon

      View table
      View in Article

      Table 1. Comparison of O-Band Single Wavelength Lasers on Silicon

      Laser TypeIth(mA)Δλ(nm)SMSR (dB)Linewidth (kHz)
      Epitaxial Growth
      DFB [16]12NA50NA
      Tunable [17]331645NA
      Tunable [18]465.435716
      Heterogeneous Integration
      DFB [19]9.5NA47NA
      Vernier ring [15]30544550
      Interferometric [20]9.53040NA
      SGDBR [21]1003535NA
      This work3052585.3
    Tools

    Get Citation

    Copy Citation Text

    Aditya Malik, Joel Guo, Minh A. Tran, Geza Kurczveil, Di Liang, John E. Bowers, "Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon," Photonics Res. 8, 1551 (2020)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Silicon Photonics

    Received: Apr. 17, 2020

    Accepted: Jul. 23, 2020

    Published Online: Sep. 11, 2020

    The Author Email: Aditya Malik (amalik@ece.ucsb.edu)

    DOI:10.1364/PRJ.394726

    Topics