INFRARED, Volume. 46, Issue 5, 11(2025)

Study on Surface Defects of 6-in Short-Wave Silicon-Based HgCdTe Based on Molecular Beam Epitaxy

Zhen LI... Dan WANG, Meng-jia JiIANG, Chong-shang GUAN, Wei-rong XING, Wei-lin SHE and Jia-jia NIU |Show fewer author(s)
Author Affiliations
  • North China Research Institute of Electro-Optics, Beijing 100015, China
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    References(1)

    [1] [1] Reddy M, Jin X, Lofgreen D D, et al. Demonstration of high-quality MBE HgCdTe on 8-inch wafers[J].Journal of Electronic Materials, 2019,48(10): 6040-6044.

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    LI Zhen, WANG Dan, JiIANG Meng-jia, GUAN Chong-shang, XING Wei-rong, SHE Wei-lin, NIU Jia-jia. Study on Surface Defects of 6-in Short-Wave Silicon-Based HgCdTe Based on Molecular Beam Epitaxy[J]. INFRARED, 2025, 46(5): 11

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    Paper Information

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    Received: Nov. 1, 2024

    Accepted: Jun. 12, 2025

    Published Online: Jun. 12, 2025

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2025.05.002

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