INFRARED, Volume. 46, Issue 5, 11(2025)
Study on Surface Defects of 6-in Short-Wave Silicon-Based HgCdTe Based on Molecular Beam Epitaxy
[1] [1] Reddy M, Jin X, Lofgreen D D, et al. Demonstration of high-quality MBE HgCdTe on 8-inch wafers[J].Journal of Electronic Materials, 2019,48(10): 6040-6044.
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LI Zhen, WANG Dan, JiIANG Meng-jia, GUAN Chong-shang, XING Wei-rong, SHE Wei-lin, NIU Jia-jia. Study on Surface Defects of 6-in Short-Wave Silicon-Based HgCdTe Based on Molecular Beam Epitaxy[J]. INFRARED, 2025, 46(5): 11
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Received: Nov. 1, 2024
Accepted: Jun. 12, 2025
Published Online: Jun. 12, 2025
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