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Chinese Journal of Lasers, Volume. 52, Issue 5, 0501016(2025)

High‐Speed Direct Modulation Characteristics of External‐Cavity Surface‐Emitting Laser

Qi Wang1, Zishuo Zhang2, Xuefang Peng1, Lidan Jiang1, Tao Wang1, Renjiang Zhu1、*, Maohua Jiang1, Cunzhu Tong3, Yanrong Song4, and Peng Zhang5
Author Affiliations
  • 1College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China
  • 2Department of Physics and Astronomy, University of London, London WC1E 6BT, UK
  • 3State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin , China
  • 4College of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
  • 5National Center for Applied Mathematics in Chongqing, Chongqing Normal University, Chongqing 401331, China
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    AbstractGet PDF(in Chinese)
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    Figures & Tables(9)
    Design of semiconductor laser modulation drive circuit

    Fig. 1. Design of semiconductor laser modulation drive circuit

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    Characteristic curves of LD. (a) Voltage-current characteristic curves of LD; (b) modulation bandwidth of directly modulated LD pump source

    Fig. 2. Characteristic curves of LD. (a) Voltage-current characteristic curves of LD; (b) modulation bandwidth of directly modulated LD pump source

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    Epitaxial structure of gain chip

    Fig. 3. Epitaxial structure of gain chip

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    Schematic of system used to directly modulate VECSEL straight cavity

    Fig. 4. Schematic of system used to directly modulate VECSEL straight cavity

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    Responses of carrier lifetime and photon lifetime to carrier density and optical density. (a) Short carrier and long photon lifetimes; (b) long carrier and short photon lifetimes

    Fig. 5. Responses of carrier lifetime and photon lifetime to carrier density and optical density. (a) Short carrier and long photon lifetimes; (b) long carrier and short photon lifetimes

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    Spectrum, linewidth, and beam quality factors of VECSEL measured under bias pump

    Fig. 6. Spectrum, linewidth, and beam quality factors of VECSEL measured under bias pump

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    Relationship between VECSEL modulation bandwidth and resonator cavity length

    Fig. 7. Relationship between VECSEL modulation bandwidth and resonator cavity length

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    Relationship between VECSEL modulation bandwidth and M2

    Fig. 8. Relationship between VECSEL modulation bandwidth and M2

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    Time domain waveforms of VECSEL resonator responses under different output mirrors

    Fig. 9. Time domain waveforms of VECSEL resonator responses under different output mirrors

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    Qi Wang, Zishuo Zhang, Xuefang Peng, Lidan Jiang, Tao Wang, Renjiang Zhu, Maohua Jiang, Cunzhu Tong, Yanrong Song, Peng Zhang. High‐Speed Direct Modulation Characteristics of External‐Cavity Surface‐Emitting Laser[J]. Chinese Journal of Lasers, 2025, 52(5): 0501016

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    Paper Information

    Category: laser devices and laser physics

    Received: Aug. 14, 2024

    Accepted: Oct. 22, 2024

    Published Online: Mar. 8, 2025

    The Author Email: Zhu Renjiang (20131121@cqnu.edu.cn)

    DOI:10.3788/CJL241140

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology