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Acta Optica Sinica, Volume. 44, Issue 22, 2206002(2024)

All-Fiber Electric Field Sensor Based on Organic Electro-Optic Polymer

Qizhen Song1, Feng Liu1, Yanbo Yang1, Wenxiang Zhang1, Ziye Wu1, Zhuoqi Li1, Zhibin Li1, Pengpeng Fan1, Jieyuan Tang1,2, Wenguo Zhu1, Huadan Zheng1, Yongchun Zhong1, Zhe Chen1,2, and Jianhui Yu1,2、*
Author Affiliations
  • 1Department of Optoelectronic Engineering, College of Physics and Optoelectronic Engineering, Jinan University, Guangzhou 510632, Guangdong , China
  • 2Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Jinan University, Guangzhou 510632, Guangdong , China
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    Figures & Tables(12)
    Structure diagram of electric field sensor

    Fig. 1. Structure diagram of electric field sensor

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    Numerical simulation of interference modes in varying diameter TTMF along x polarization. (a)‒(c) Variation of effective refractive indexes neff11, neff21, and neff12 for HE11x, HE21x, and HE12x modes on TTMF diameter and film refractive index changes Δnfilm; (d) variation of effective refractive index difference between HE11x and HE12x modes on TTMF diameter and film refractive index changes; (e) variation of effective refractive index difference between HE11x and HE21x modes on TTMF diameter and film refractive index changes

    Fig. 2. Numerical simulation of interference modes in varying diameter TTMF along x polarization. (a)‒(c) Variation of effective refractive indexes neff11, neff21, and neff12 for HE11x, HE21x, and HE12x modes on TTMF diameter and film refractive index changes Δnfilm; (d) variation of effective refractive index difference between HE11x and HE12x modes on TTMF diameter and film refractive index changes; (e) variation of effective refractive index difference between HE11x and HE21x modes on TTMF diameter and film refractive index changes

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    Numerical simulation of interference modes in varying diameter TTMF along y polarization. (a)‒(c) Variation of effective refractive indexes neff11, neff21, and neff12 for HE11y, HE21y, and HE12y modes on TTMF diameter and film refractive index changes Δnfilm; (d) variation of effective refractive index difference between HE11y and HE12y modes on TTMF diameter and film refractive index changes; (e) variation of effective refractive index difference between HE11y and HE21y modes on TTMF diameter and film refractive index changes

    Fig. 3. Numerical simulation of interference modes in varying diameter TTMF along y polarization. (a)‒(c) Variation of effective refractive indexes neff11, neff21, and neff12 for HE11y, HE21y, and HE12y modes on TTMF diameter and film refractive index changes Δnfilm; (d) variation of effective refractive index difference between HE11y and HE12y modes on TTMF diameter and film refractive index changes; (e) variation of effective refractive index difference between HE11y and HE21y modes on TTMF diameter and film refractive index changes

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    Experimental and simulated transmission spectra with applied electric field of 0 V. (a) Transmission spectrum of fabricated TTMF; (b) transmission spectrum of simulated TTMF

    Fig. 4. Experimental and simulated transmission spectra with applied electric field of 0 V. (a) Transmission spectrum of fabricated TTMF; (b) transmission spectrum of simulated TTMF

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    Numerical simulation using 3DFD-BPM method. (a) Field evolution of mode interference for electric field sensor; (b) simulated transmission spectra of electric field sensor under voltages of 0‒945 V; (c) shift of dip wavelength with applied voltage (Triangles correspond to light intensity sensitivity and circles correspond to wavelength sensitivity)

    Fig. 5. Numerical simulation using 3DFD-BPM method. (a) Field evolution of mode interference for electric field sensor; (b) simulated transmission spectra of electric field sensor under voltages of 0‒945 V; (c) shift of dip wavelength with applied voltage (Triangles correspond to light intensity sensitivity and circles correspond to wavelength sensitivity)

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    Numerical simulation of device with different film thicknesses. (a) Linear fitting of wavelength drift with 0‒945 V voltages applied under different film thicknesses; (b) wavelength drift and extinction ratio of electric field sensor with 0‒945 V voltages applied under different film thicknesses

    Fig. 6. Numerical simulation of device with different film thicknesses. (a) Linear fitting of wavelength drift with 0‒945 V voltages applied under different film thicknesses; (b) wavelength drift and extinction ratio of electric field sensor with 0‒945 V voltages applied under different film thicknesses

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    Diagram of production process. (a) Prodution process; (b) integrated product of PDPP film and TTMF; (c) stretched waist area of TTMF; comparison of DR1/PMMA (d) before and (e) after electric polarization

    Fig. 7. Diagram of production process. (a) Prodution process; (b) integrated product of PDPP film and TTMF; (c) stretched waist area of TTMF; comparison of DR1/PMMA (d) before and (e) after electric polarization

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    Raman spectra of red and black regions

    Fig. 8. Raman spectra of red and black regions

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    Diagram of experimental setup

    Fig. 9. Diagram of experimental setup

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    Experimental transmission spectra. (a) Measured transmission spectra of electric field sensor with applied voltages of 0, 20, 40, 80, and 100 V around 1566.2 nm; (b) transmission spectra with applied voltages of 0 V and -100 V around 1584 nm; (c) dynamic transmitted optical power variations for applying 0 V and -100 V in steps of -20 V at 1566.2 nm; (d) linear fitting of output optical power versus applied voltage

    Fig. 10. Experimental transmission spectra. (a) Measured transmission spectra of electric field sensor with applied voltages of 0, 20, 40, 80, and 100 V around 1566.2 nm; (b) transmission spectra with applied voltages of 0 V and -100 V around 1584 nm; (c) dynamic transmitted optical power variations for applying 0 V and -100 V in steps of -20 V at 1566.2 nm; (d) linear fitting of output optical power versus applied voltage

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    Frequency response of device. (a)‒(c) Output optical signal (dashed line) on an oscilloscope with input electrical signals (solid line) at 100 Hz, 1 kHz, and 3 kHz; (d)‒(f) FFT spectrum for output optical signal with applied modulated voltage at 100 Hz, 1 kHz, and 3 kHz; (g) frequency response; (h) THD from 10 Hz to 20 kHz

    Fig. 11. Frequency response of device. (a)‒(c) Output optical signal (dashed line) on an oscilloscope with input electrical signals (solid line) at 100 Hz, 1 kHz, and 3 kHz; (d)‒(f) FFT spectrum for output optical signal with applied modulated voltage at 100 Hz, 1 kHz, and 3 kHz; (g) frequency response; (h) THD from 10 Hz to 20 kHz

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    • Table 1. Response time and sensitivity of electric field sensing under different structures

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      Table 1. Response time and sensitivity of electric field sensing under different structures

      Sensor structureMechanismMaterialSensitivityResponse time /ms
      TTMFMode interferenceDR1/PMMA0.86 dB/V~0.25
      PCS［9］Fano resonanceLN125.67 μV/（V/m）NA
      PCF［13］MZILC1.11 nm/VNA
      PCF［47］Long-period gratingLC0.445 dB/V8.8
      PCF［48］Tunable photonic bandgapLC2.1 dB/V~3
      PMPCF［49］Sagnac interferometerLC3.9 nm/V235.5
      Twin-FBG［50］FPIPolyimide tubing173.65 μV/（V/m）316
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    Qizhen Song, Feng Liu, Yanbo Yang, Wenxiang Zhang, Ziye Wu, Zhuoqi Li, Zhibin Li, Pengpeng Fan, Jieyuan Tang, Wenguo Zhu, Huadan Zheng, Yongchun Zhong, Zhe Chen, Jianhui Yu. All-Fiber Electric Field Sensor Based on Organic Electro-Optic Polymer[J]. Acta Optica Sinica, 2024, 44(22): 2206002

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    Paper Information

    Category: Fiber Optics and Optical Communications

    Received: May. 27, 2024

    Accepted: Aug. 5, 2024

    Published Online: Nov. 19, 2024

    The Author Email: Jianhui Yu (jianhuiyu@jnu.edu.cn)

    DOI:10.3788/AOS241076

    CSTR:32393.14.AOS241076

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology