It presents thepreparation of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films by pulsed laserablation deposition technique in the article. The substrate was single crystal Si(100) andthe pulse laser beam was Nd:YAG laser with wavelength of 532 nm and frequency of 5 Hz. Themicrostructures and micrographs of deposited PZT thin films were studied by X-raydiffraction (XRD) and scanning electron microscopy (SEM), respectively. The evolution ofmicrostructure and micrograph with the variation of substrate temperature was given. Theeffect of substrate temperature on preparation of PZT thin films was discussed on twopoints. One is the chemical reactions of laser ablations with the mixture induced byenergy release with the contribution of epitaxial stress, intrinsic stress and thermalstress as well as phase transformation stress.