[1] [1] Lockwood H F, Kressel H, Sommers Jr H S, et al. An efficient large optical cavity injection laser［J］. Applied Physics Letters, 1970, 17(11): 499-502.

[2] [2] Wenzel H, Bugge F, Erbert G, et al. High-power diode lasers with small vertical beam divergence emitting at 808 nm［J］. Electronics Letters, 2001, 37(16): 1024-1026.

[3] [3] Sebastian J, Beister G, Bugge F, et al. High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2001, 7(2): 334-339.

[4] [4] Erbert G, Beister G, Hulsewede R, et al. High-power highly reliable Al-free 940-nm diode lasers［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2001, 7(2): 143-148.

[5] [5] Bogatov A P, Gushchik T I, Drakin A. E, et al. Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power［J］. Quantum Electronics, 2008, 38(10): 935.

[6] [6] Xu Z T, Gao W, Siskavich B, et al. Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure［C］. SPIE, 2004, 5363: 142-147.

[7] [7] Zhang J X, Liu L, Chen W, et al. Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure［J］. Chinese Optics Letters, 2012, 10(6): 061401.

[8] [8] Kaspi R, Tilton M L, Dente G C, et al. Ultralow beam divergence and increased lateral brightness in optically pumped midinfrared laser［J］. IEEE Photonics Technology Letters, 2012, 24(7): 599-601.

[9] [9] Crump P, Pietrzak A, Bugge F, et al. 975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers［J］. Applied Physics Letters, 2010, 96(13): 131110.

[10] [10] Pietrzak A, Crump P, Wenzel H, et al. Combination of low-index quantum barrier and super large optical cavity designs for ultranarrow vertical far-fields from high-power broad-area lasers［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(6): 1715-1722.

[11] [11] Pietrzak A, Wenzel H, Crump P, et al. 1060-nm ridge waveguide lasers based on extremely wide waveguides for 1.3-W continuous-wave emission into a single mode with FWHM divergence angle of 9°×6°［J］. IEEE Journal of Quantum Electronics, 2012, 48(5): 568-575.

[12] [12] Ledentsov N N, Shchukin V A. Novel approaches to semiconductor lasers［C］. In Asia-Pacific Optical and Wireless Communications, 2002: 222-234.

[13] [13] Maximov M V, Shernyakov Y M, Novikov I I, et al. High power GaInP/AlGaInP visible lasers (λ= 646 nm) with narrow circular shaped far-field pattern［J］. Electronics Letters, 2005, 41(13): 741-742.

[14] [14] Novikov I I, Karachinsky L Y, Maximov M V, et al. Single mode cw operation of 658 nm AlGaInP lasers based on longitudinal photonic band gap crystal［J］. Applied Physics Letters, 2006, 88(23): 231108.

[15] [15] Posilovic K, Kettler T, Shchukin V A, et al. Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes［J］. Applied Physics Letters, 2008, 93(22): 221102.

[16] [16] Novikov I I, Gordeev N Y, Shernyakov Y M, et al. High-power single mode (>1 W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence［J］. Applied Physics Letters, 2008, 92(10): 103515.

[17] [17] Posilovic K, Kalosha V P, Winterfeldt M, et al. High-power low-divergence 1060 nm photonic crystal laser diodes based on quantum dots［J］. Electronics Letters, 2012, 48(22): 1419-1420.

[18] [18] Miah M J, Kettler T, Posilovic K, et al. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area［J］. Applied Physics Letters, 2014, 105(15): 151105.

[19] [19] Liu L, Qu H W, Liu Y, et al. Design and analysis of laser diodes based on the longitudinal photonic band crystal concept for high power and narrow vertical divergence［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2015, 21(1): 440-446.

[20] [20] Liu L, Qu H W, Liu Y, et al. High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure［J］. Applied Physics Letters, 2014, 105(23): 231110.

[21] [21] Liu L, Qu H W, Liu Y, et al. High-performance low-divergence angled laser diodes with two-dimensionally tilted sidewalls［J］. IEEE Photonics Technology Letters, 2014, 26(6): 552-555.

[22] [22] Ma X L, Liu A J, Qu H W, et al. Nearly diffraction-limited and low-divergence tapered lasers with photonic crystal structure［J］. IEEE Photonics Technology Letters, 2016, 28(21): 2403.

[23] [23] Zhao S Y, Qu H W, Liu Y, et al. High efficiency single transverse mode photonic band crystal lasers with low vertical divergence［C］. SPIE, 2016, 10019: 100190A.

[24] [24] Crump P A, Grimshaw M, Wang J, et al. 85% power conversion efficiency 975 nm broad area diode lasers at -50 ℃, 76% at 10 ℃［C］. In Quantum Electronics and Laser Science Conference, 2006: JWB24.